is43dr16320b-3dbi Integrated Silicon Solution, Inc., is43dr16320b-3dbi Datasheet - Page 14

• Manufacturer Part Number: is43dr16320b-3dbi
• Description: 512mb X8, X16 Ddr2 Sdram
• Manufacturer: Integrated Silicon Solution, Inc.

IS43DR86400B, IS43/46DR16320B
Absolute Maximum DC Ratings
Notes:
1.
2.
3.
4.
AC and DC Operating Conditions
Recommended DC Operating Conditions (SSTL ‐1.8)
Notes:
1.
2.
3.
4.
5.
Operating Temperature Condition
Notes:
1.
2.
3.
Thermal Resistance
Integrated Silicon Solution, Inc. – www.issi.com –
Rev. 00B, 12/11/2009
Package
60‐ball
84‐ball
Symbol
Symbol
TOPER
TOPER
VDDQ
VDDL
VREF
VDD
VTT
Stresses greater than those listed under Absolute Maximum DC Ratings may cause permanent damage to the device. This is a stress rating only and functional
operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect reliability.
Storage Temperature is the case surface temperature on the center/top side of the DRAM.
VDD and VDDQ must be within 300mV of each other at all times; and VREF must be not greater than 0.6 x VDDQ. When VDD and VDDQ and VDDL are less than
500mV, VREF may be equal to or less than 300mV.
Voltage on any input or I/O may not exceed voltage on VDDQ.
There is no specific device VDD supply voltage requirement for SSTL‐1.8 compliance. However, under all conditions VDDQ must be less than or equal to VDD.
The value of VREF may be selected by the user to provide optimum noise margin in the system. Typically the value of VREF is expected to be about 0.5 x VDDQ
of the transmitting device and VREF is expected to track variations in VDDQ.
Peak to peak AC noise on VREF may not exceed ±2% VREF(DC).
VTT of transmitting device must track VREF of receiving device.
AC parameters are measured with VDD, VDDQ and VDDL tied together.
Tc = Operating case temperature at center of package.
Ta = Operating ambient temperature immediately above package center.
Both temperature specifications must be met.
Vin, Vout
Symbol
VDDQ
VDDL
VDD
Tstg
Industrial Operating Temperature, Automotive Operating Temperature (A1)
Substrate
Supply Voltage for Output
4‐layer
4‐layer
Input Reference Voltage
Supply Voltage for DLL
Termination Voltage
Supply Voltage
Parameter
Voltage on VDDQ pin relative to Vss
Voltage on VDDL pin relative to Vss
Voltage on VDD pin relative to Vss
Voltage on any pin relative to Vss
Commercial Operating Temperature
(Airflow = 0m/s)
Storage Temperature
Theta‐ja
(1, 2, 3)
Parameter
42.4
TBD
Parameter
0.49*VDDQ
VREF‐0.04
Min.
1.7
1.7
1.7
(Airflow = 1m/s)
Theta‐ja
37.7
TBD
0.50*VDDQ
Rating
VREF
Typ.
1.8
1.8
1.8
‐55 to +100
‐ 0.5 to 2.3
‐ 0.5 to 2.3
‐ 0.5 to 2.3
‐1.0 to 2.3
Rating
(Airflow = 2m/s)
Theta‐ja
34.9
TBD
Tc = ‐40 to +95, Ta = ‐40 to +85
0.51*VDDQ
VREF+0.04
Tc = 0 to +85, Ta = 0 to +70
Max.
1.9
1.9
1.9
Rating
Units
Theta‐jc
°C
V
V
V
V
Units
TBD
mV
3.8
V
V
V
V
Notes
1, 3
1, 3
1, 3
1, 4
1, 2
Notes
1, 5
2, 3
1
5
4
Units
C/W
C/W
Units
14
°C
°C