w9425g6jh Winbond Electronics Corp America, w9425g6jh Datasheet

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w9425g6jh

Manufacturer Part Number
w9425g6jh
Description
4 M
Manufacturer
Winbond Electronics Corp America
Datasheet

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Table of Contents-
1.
2.
3.
4.
5.
6.
7.
GENERAL DESCRIPTION.............................................................................................................................4
FEATURES ....................................................................................................................................................4
KEY PARAMETERS ......................................................................................................................................5
PIN CONFIGURATION ..................................................................................................................................6
PIN DESCRIPTION........................................................................................................................................7
BLOCK DIAGRAM .........................................................................................................................................8
FUNCTIONAL DESCRIPTION.......................................................................................................................9
7.1
7.2
7.3
7.4
7.5
7.6
7.7
7.8
7.9
7.10
Power Up Sequence ..........................................................................................................................9
Command Function ..........................................................................................................................10
7.2.1
7.2.2
7.2.3
7.2.4
7.2.5
7.2.6
7.2.7
7.2.8
7.2.9
7.2.10 No-Operation Command ......................................................................................................11
7.2.11 Burst Read Stop Command..................................................................................................11
7.2.12 Device Deselect Command ..................................................................................................11
7.2.13 Auto Refresh Command .......................................................................................................11
7.2.14 Self Refresh Entry Command...............................................................................................12
7.2.15 Self Refresh Exit Command .................................................................................................12
7.2.16 Data Write Enable /Disable Command .................................................................................12
Read Operation ................................................................................................................................12
Write Operation ................................................................................................................................13
Precharge.........................................................................................................................................13
Burst Termination .............................................................................................................................13
Refresh Operation ............................................................................................................................13
Power Down Mode ...........................................................................................................................14
Input Clock Frequency Change during Precharge Power Down Mode ............................................14
Mode Register Operation .................................................................................................................14
7.10.1 Burst Length field (A2 to A0) ................................................................................................14
7.10.2 Addressing Mode Select (A3)...............................................................................................15
Bank Activate Command ......................................................................................................10
Bank Precharge Command ..................................................................................................10
Precharge All Command ......................................................................................................10
Write Command ...................................................................................................................10
Write with Auto-precharge Command...................................................................................10
Read Command ...................................................................................................................10
Read with Auto-precharge Command ..................................................................................10
Mode Register Set Command ..............................................................................................11
Extended Mode Register Set Command ..............................................................................11
4 M × 4 BANKS × 16 BITS DDR SDRAM
- 1 -
Publication Release Date: May 26, 2010
W9425G6JH
Revision A01

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w9425g6jh Summary of contents

Page 1

... Read Operation ................................................................................................................................12 7.4 Write Operation ................................................................................................................................13 7.5 Precharge.........................................................................................................................................13 7.6 Burst Termination .............................................................................................................................13 7.7 Refresh Operation ............................................................................................................................13 7.8 Power Down Mode ...........................................................................................................................14 7.9 Input Clock Frequency Change during Precharge Power Down Mode ............................................14 7.10 Mode Register Operation .................................................................................................................14 7.10.1 Burst Length field (A2 to A0) ................................................................................................14 7.10.2 Addressing Mode Select (A3)...............................................................................................15 W9425G6JH Publication Release Date: May 26, 2010 - 1 - Revision A01 ...

Page 2

... Command Input Timing ....................................................................................................................34 11.2 Timing of the CLK Signals ................................................................................................................34 11.3 Read Timing (Burst Length = 4) .......................................................................................................35 11.4 Write Timing (Burst Length = 4) .......................................................................................................36 11.5 DM, DATA MASK (W9425G6JH) .....................................................................................................37 11.6 Mode Register Set (MRS) Timing.....................................................................................................38 11.7 Extend Mode Register Set (EMRS) Timing ......................................................................................39 11.8 Auto-precharge Timing (Read Cycle ..................................................................................40 11.9 Auto-precharge Timing (Read cycle 2), continued..................................................................41 11 ...

Page 3

... Precharged/Active Power Down Mode Entry and Exit Timing ..........................................................49 11.25 Input Clock Frequency Change during Precharge Power Down Mode Timing.................................49 11.26 Self Refresh Entry and Exit Timing...................................................................................................50 12. PACKAGE SPECIFICATION .......................................................................................................................51 12.1 TSOP 66 lI – 400 mil ........................................................................................................................51 13. REVISION HISTORY ...................................................................................................................................52 W9425G6JH Publication Release Date: May 26, 2010 - 3 - Revision A01 ...

Page 4

... SDRAM), organized as 4,194,304 words × 4 banks × 16 bits. W9425G6JH delivers a data bandwidth 500M words per second (-4). To fully comply with the personal computer industrial standard, W9425G6JH is sorted into the following speed grades: -4, -5 and -5I. The -4 is compliant to the DDR500/CL3 and CL4 specification. The -5/-5I is compliant to the DDR400/CL3 specification (the -5I grade which is guaranteed to support -40° ...

Page 5

... Operating Current: One Bank Active-Read-Precharge DD1 I Burst Operation Current DD4R I Burst Operation Current DD4W I Auto Refresh Burst current DD5 I Self-Refresh Current DD6 DESCRIPTION 2 W9425G6JH MIN/MAX. -4 -5/-5I Min. - 7.5 nS Max. - Min. - Max. - Min Max Min Max Min ...

Page 6

... Publication Release Date: May 26, 2010 - 6 - W9425G6JH DQ15 64 V SSQ 63 DQ14 62 DQ13 61 V DDQ 60 DQ12 59 DQ11 58 V SSQ 57 DQ10 56 DQ9 55 V DDQ 54 DQ8 53 NC ...

Page 7

... Ground for logic circuit inside DDR SDRAM. Power for I/O Separated power from V Buffer improve noise. Ground for I/O Separated ground from V Buffer improve noise. No Connection No connection - 7 - W9425G6JH DESCRIPTION ) define the command CS , used for output buffer used for output buffer Publication Release Date: May 26, 2010 Revision A01 ...

Page 8

... BANK #0 SENSE AMPLIFIER PREFETCH REGISTER DATA CONTROL CIRCUIT COLUMN DECODER CELL ARRAY BANK #2 SENSE AMPLIFIER NOTE: The cell array configuration is 8192 * 512 * W9425G6JH COLUMN DECODER CELL ARRAY BANK #1 SENSE AMPLIFIER DQ BUFFER COLUMN DECODER CELL ARRAY BANK #3 SENSE AMPLIFIER Publication Release Date: May 26, 2010 ...

Page 9

... DDQ and V TT MRS PREA AREF 2 Clock min 200 Clock min. DLL reset with A8 = High Initialization sequence after power- W9425G6JH . REF AREF MRS t RFC 2 Clock min. t RFC Disable DLL reset with A8 = Low Publication Release Date: May 26, 2010 Revision A01 ANY ...

Page 10

... Read with Auto-precharge Command ( RAS = "H", CAS = ”L” ”H”, BA0, BA1 = Bank, A10 = ”H” Column Address) The Read with Auto-precharge command automatically performs the Precharge operation after the Read operation. W9425G6JH Publication Release Date: May 26, 2010 - 10 - Revision A01 ...

Page 11

... The refresh addressing is generated by the internal refresh controller. This makes the address bits ”Don’t Care” during an AUTO REFRESH command. The DDR SDRAM requires AUTO CK - (BL/ Publication Release Date: May 26, 2010 - 11 - W9425G6JH Revision A01 ...

Page 12

... Refer to the diagrams for Read operation. (maximum). To allow for improved REFI . REFI because time is required for the completion of any internal refresh in from the Bank Activate command, the data is read out sequentially W9425G6JH Publication Release Date: May 26, 2010 Revision A01 ...

Page 13

... In Self Refresh mode, all input/output buffers are disabled, from the bank activate command. The input data is latched RCD from the bank activate command. RAS(max) . RFC Publication Release Date: May 26, 2010 - 13 - W9425G6JH . Therefore, each RAS (max) Revision A01 ...

Page 14

... This field specifies the data length for column access using the pins and sets the Burst Length and 8 words BURST LENGTH 0 Reserved 1 2 words 0 4 words 1 8 words x Reserved Publication Release Date: May 26, 2010 - 14 - W9425G6JH Revision A01 ...

Page 15

... words (address bit A0, A1) Not carried from words (address bits A2, A1 and A0) Not carried from Addressing Sequence of Interleave Mode ACCESS ADDRESS - 15 - W9425G6JH BURST LENGTH BURST LENGTH 2 words 4 words 8 words Publication Release Date: May 26, 2010 Revision A01 ...

Page 16

... These bits are reserved for future operations. They must be set to "0" for normal operation. A4 CAS LATENCY A12-A0 Regular MRS Cycle Extended MRS Cycle Reserved DLL Enable Disable A1 BUFFER STRENGTH Publication Release Date: May 26, 2010 - 16 - W9425G6JH Reserved Reserved 2 3 Reserved Reserved 2.5 Reserved 100% Strength 60% Strength Reserved 30% Strength Revision A01 ...

Page 17

... CKE signal is input level one clock cycle before the commands are issued. 3. These are state designated by the BA0, BA1 signals. 4. LDM, UDM (W9425G6JH). 5. Power Down Mode can not entry in the burst cycle. BA0, (4) CKEn-1 CKEn ...

Page 18

... BST BA, CA, A10 READ/READA L BA, CA, A10 WRIT/WRITA BA, RA ACT L BA, A10 PRE/PREA X AREF/SELF L Op-Code MRS/EMRS - 18 - W9425G6JH ACTION NOP NOP ILLEGAL ILLEGAL Row activating NOP Refresh or Self refresh Mode register accessing NOP NOP Begin read: Determine AP Begin write: Determine AP ILLEGAL Precharge ILLEGAL ...

Page 19

... BA, CA, A10 READ/READA L BA, CA, A10 WRIT/WRITA H BA, RA ACT L BA, A10 PRE/PREA H X AREF/SELF L Op-Code MRS/EMRS - 19 - W9425G6JH ACTION NOTES Continue burst to end Continue burst to end ILLEGAL ILLEGAL ILLEGAL ILLEGAL ILLEGAL ILLEGAL ILLEGAL Continue burst to end Continue burst to end ILLEGAL ILLEGAL ILLEGAL ILLEGAL ...

Page 20

... X ACT/PRE/PREA X AREF/SELF/MRS/EMRS X DSL X NOP L X BST X READ/WRIT ACT/PRE/PREA/ARE X F/SELF/MRS/EMRS W9425G6JH ACTION NOP -> Row active after t WR NOP -> Row active after t WR ILLEGAL ILLEGAL ILLEGAL ILLEGAL ILLEGAL ILLEGAL ILLEGAL NOP -> Enter precharge after t WR NOP -> Enter precharge after t WR ILLEGAL ILLEGAL ...

Page 21

... Refer to Function Truth Table Enter Power down Enter Power down ILLEGAL ILLEGAL ILLEGAL Power down Refer to Function Truth Table - 21 - W9425G6JH ACTION NOTES XSNR XSNR IS Publication Release Date: May 26, 2010 Revision A01 ...

Page 22

... PDEX ACT PDEX PD ROW ACTIVE Write Read Read A Write A Read A PRE PRE PRE PRE CHARGE PRE - 22 - W9425G6JH SELF REFRESH SREFX AUTO REFRESH PD POWER DOWN BST Read Read Read Read A Read A Automatic Sequence Command Sequence Publication Release Date: May 26, 2010 Revision A01 ...

Page 23

... D I OUT MIN. TYP. 2.3 2.4 2.3 - 2 DDQ V - 0.04 V REF V + 0.15 REF -0.3 -0.3 0. 0.31 REF - 0 0.2 DDQ 0.2 DDQ +1.5V with a pulse width < W9425G6JH RATING UNIT -0 0.5 V DDQ - °C - °C -55 ~ 150 °C 260 ° MAX. UNIT NOTES 2.5 2 2.7 V 2.5 2 2 ...

Page 24

... OUT (DC) DDQ OUT MIN. 2.0 2.0 4.0 < Pin 0V < V < DD REF IN < OUT DDQ , min. V REF TT , max REF TT , min. V REF min. V REF TT , max REF W9425G6JH DELTA MAX. (MAX.) 3.0 0.5 3.0 0.25 5.0 0.5 UNIT MIN. MAX µ µA V +0. -0. - ...

Page 25

... CK max for DQ, DQS and DM IL min min; IH min or < min; min; One Bank Active-Precharge; IH min; = 0mA = t min RFC external clock on 0mA W9425G6JH MAX. UNIT NOTES -4 -5/- max 140 120 135 115 ...

Page 26

... -0.7 0.7 -0.6 0.6 0.4 0.45 0.55 0.45 0.55 min -0.5 HP 0.9 1.1 0.4 0.6 0.4 0.4 1.75 0.35 0.35 0.2 0.2 0 0.25 0.4 0.6 0.85 1.15 0.6 0.6 0.7 0.7 2.2 0.7 -0.7 0.7 0.5 1 200 7.8 8 Publication Release Date: May 26, 2010 - 26 - W9425G6JH -5/-5I UNIT NOTES MIN. MAX 100000 7 -0.7 0.7 16 -0.6 0.6 16 0.4 0.45 0. 0.45 0.55 Min ...

Page 27

... DDQ system supply for signal termination resistors is expected to be set TT . REF and V .Transition (rise and fall) of input signals have a fixed IH min(AC) IL max(AC) contains more than one decimal place, the result is rounded W9425G6JH VALUE 0.31 IH REF 0.31 IL REF V 0 ...

Page 28

... These parameters guarantee device timing, but they are not necessarily tested on each device. They may be guaranteed by device design or tester correlation. (23) Slew Rate is measured between ICK ICK V V ISO(min) ISO(max) (ac) and V (ac W9425G6JH ICK ID(AC) Publication Release Date: May 26, 2010 Revision A01 ...

Page 29

... +75 0 +150 0 Δt Δ +50 0 +100 0 TYPICAL MINIMUM RANGE (V/NS) (V/NS) 1.2 ~ 2.5 0.7 1.2 ~ 2.5 0 W9425G6JH DDR500 DDR400 UNIT MAX. MIN. MAX. 4.0 0.5 4.0 V/nS UNIT NOTES UNIT NOTES UNIT NOTES MAXIMUM NOTES (V/NS Publication Release Date: May 26, 2010 ...

Page 30

... VDD Max. area Max. amplitude = 1. 0.5 0.68751.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.06.3125 6.5 7.0 Figure 3: Address and Control AC Overshoot and Undershoot Definition DDR500 MIN. 0.67 Overshoot Time (nS W9425G6JH DDR400 NOTES MAX. MIN. MAX. 1.5 0.67 1 SPECIFICATION DDR500 DDR400 1.5 V 1.5 V 1.5 V 1.5 V 3.0 V-nS 3.0 V-nS 3.0 V-nS 3.0 V-nS Max. amplitude = 1.5V GND ...

Page 31

... Max. area in Figure 4 VDD Max. area Max. amplitude = 1. 0.5 1.0 1.42 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 5.68 6.0 6.5 7.0 Figure 4: DQ/DM/DQS AC Overshoot and Undershoot Definition Overshoot Time (nS W9425G6JH SPECIFICATION DDR500 DDR400 1.2 V 1.2 V 1.2 V 1.2 V 1.44 V-nS 1.44 V-nS 1.44 V-nS 1.44 V-nS Max. amplitude = 1.2V GND Undershoot Publication Release Date: May 26, 2010 Revision A01 ...

Page 32

... C (T Ambient Maximum Ambient), V Test point 50 Ω VSSQ VDDQ 50 Ω Test point /2 - 320 mV ± 250 mV) DDQ /2 + 320 mV ± 250 mV) DDQ = nominal, typical process DDQ = minimum, slow-slow process DDQ = maximum, fast-fast process DDQ Publication Release Date: May 26, 2010 - 32 - W9425G6JH Revision A01 ...

Page 33

... DQ, DM, and DQS slew similarly for rising transitions. IL(AC) IH(DC) IL(DC) and t in the case where the I/O slew rate is below 0.5 V/nS. The W9425G6JH and IH(AC) IL(AC) Publication Release Date: May 26, 2010 Revision A01 of 100 IH(DC) ...

Page 34

... TIMING WAVEFORMS 11.1 Command Input Timing 11.2 Timing of the CLK Signals W9425G6JH Publication Release Date: May 26, 2010 - 34 - Revision A01 ...

Page 35

... IS IH CMD READ ADD Col CAS Latency = 2 Hi-Z DQS Hi-Z Output (Data) CAS Latency = 3 Hi-Z DQS Hi-Z Output (Data) Notes: The correspondence of LDQS, UDQS to DQ. (W9425G6JH) LDQS DQ0~7 UDQS DQ8~ DQSCK t DQSCK t RPRE t QH Preamble DQSQ QH DQSQ QA0 DA0 DA1 ...

Page 36

... DA DA DA0 DA1 DA2 DA3 DSH DSS DSH DSS DQSH DQSL DQSH WPST Postamble DA0 DA1 DA2 DA3 W9425G6JH Publication Release Date: May 26, 2010 Revision A01 ...

Page 37

... DM, DATA MASK (W9425G6JH) W9425G6JH Publication Release Date: May 26, 2010 - 37 - Revision A01 ...

Page 38

... Reserved A11 "0" A12 "0" BA0 "0" Mode Register Set or Extended Mode "0" BA1 Register Set * "Reserved" should stay "0" during MRS cycle. W9425G6JH t MRD NEXT CMD Burst Length Sequential Reserved ...

Page 39

... EMRS cycle t MRD NEXT CMD DLL Switch A0 Enable 0 Disable Buffer Strength 0 0 100% Strength 1 0 60% Strength 0 1 Reserved 1 1 30% Strength BA0 BA1 MRS or EMRS 0 0 Regular MRS cycle 1 Extended MRS cycle Publication Release Date: May 26, 2010 - 39 - W9425G6JH Revision A01 ...

Page 40

... In this case, the internal precharge operation begin after BL/2 cycle from READA command. AP Represents the start of internal precharging. The Read with Auto-precharge command cannot be interrupted by any other command RAS READA READA READA W9425G6JH ACT ACT ...

Page 41

... The Read with Auto-precharge command cannot be interrupted by any other command. – (BL/2) × t RAS (min RAS READA Q0 Q1 READA READA W9425G6JH t RP ACT AP AP ACT Q3 AP ACT (min) has command. RAS Publication Release Date: May 26, 2010 ...

Page 42

... DQS BL=8 WRITA CMD DQS The Write with Auto-precharge command cannot be interrupted by any other command. AP Represents the start of internal precharging. t DAL AP t DAL W9425G6JH ACT ACT t DAL AP ACT Publication Release Date: May 26, 2010 Revision A01 ...

Page 43

... Read Interrupted by Read ( 11.12 Burst Read Stop ( W9425G6JH Publication Release Date: May 26, 2010 - 43 - Revision A01 ...

Page 44

... Burst Read cycle must be terminated by BST Command to avoid I/O conflict. 11.14 Read Interrupted by Precharge ( CLK CLK CMD READ CAS Latency = 2 DQS DQ CAS Latency = 3 DQS DQ PRE CAS Latency CAS Latency W9425G6JH Publication Release Date: May 26, 2010 Revision A01 ...

Page 45

... Write Interrupted by Write ( 11.16 Write Interrupted by Read ( CLK CLK CMD WRIT DQS Data must be masked by DM READ t WTR Data masked by READ command, DQS input ignored W9425G6JH Publication Release Date: May 26, 2010 Revision A01 ...

Page 46

... CLK CMD WRIT DQS READ t WTR D2 D3 Data must be masked by DM PRE Data must be Data masked by PRE masked by DM command, DQS input ignored W9425G6JH ACT Publication Release Date: May 26, 2010 Revision A01 ...

Page 47

... READAa t RCD(a) t RAS(a) t RCD(b) t RAS(b) Preamble CL(a) APa tRC(b) tRC(a) ACTb READAa READAb tRAS(a) tRCD(b) tRAS(b) Preamble CL(a) Q0a Q1a APa - 47 - W9425G6JH t RRD READAb ACTa ACTb t RP(a) t RP(b) Postamble Preamble Postamble CL(b) Q0a Q1a Q0b Q1b APb tRRD ACTa ACTb tRP(a) tRP(b) Postamble CL(b) Q2a Q3a ...

Page 48

... READAa/b/c/d : Read with Auto Pre.CMD of bank a/b/c/d APa/b/c/d : Auto Pre. of bank a/b/c/d 11.22 4 Bank Interleave Read Operation ( RC( RRD RRD ACTb ACTc READAa ACTd tRCD(a) t RAS(a) t RCD(b) t RAS(b) CL( W9425G6JH t RRD READAb ACTa READAc RCD(c) t RAS(c) t RCD(d) t RAS(d) Preamble Postamble Preamble CL(b) Q0a Q1a Q0b Q1b APb ...

Page 49

... CLK CLK CMD NOP NOP CKE t RP Minmum 2 clocks required before changing frequency NOP t IS Frequency Change Occurs here Stable new clock before power down exit Publication Release Date: May 26, 2010 - 49 - W9425G6JH DLL NOP NOP CMD RESET 200 clocks Revision A01 ...

Page 50

... Self Refresh Entry and Exit Timing Note: If the clock frequency is changed during self refresh mode, a DLL reset is required upon exit. W9425G6JH Publication Release Date: May 26, 2010 - 50 - Revision A01 ...

Page 51

... PACKAGE SPECIFICATION 12.1 TSOP 66 lI – 400 mil Publication Release Date: May 26, 2010 - 51 - W9425G6JH Revision A01 ...

Page 52

... Winbond customers using or selling these products for use in such applications their own risk and agree to fully indemnify Winbond for any damages resulting from such improper use or sales. PAGE DESCRIPTION All Initial formally data sheet Important Notice Publication Release Date: May 26, 2010 - 52 - W9425G6JH Revision A01 ...

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