m58lt256jsb STMicroelectronics, m58lt256jsb Datasheet
m58lt256jsb
Manufacturer Part Number
m58lt256jsb
Description
256 Mbit 16 Mb 16, Multiple Bank, Multilevel, Burst 1.8 V Supply, Secure Flash Memories
Manufacturer
STMicroelectronics
Datasheet
1.M58LT256JSB.pdf
(108 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
m58lt256jsb8ZA6E
Manufacturer:
Micron Technology Inc
Quantity:
10 000
Company:
Part Number:
m58lt256jsb8ZA6F
Manufacturer:
Micron Technology Inc
Quantity:
10 000
Features
October 2007
Supply voltage
– V
– V
– V
Synchronous/asynchronous read
– Synchronous burst read mode: 52 MHz
– Random access: 85 ns
– Asynchronous page read mode
Synchronous burst read suspend
Programming time
– 5 µs typical word program time using Buffer
Memory organization
– Multiple bank memory array: 16 Mbit banks
– Parameter blocks (top or bottom location)
Dual operations
– Program/erase in one bank while read in
– No delay between read and write
Block protection
– All blocks protected at power-up
– Any combination of blocks can be protected
– Absolute write protection with V
Security
– Software security features
– 64 bit unique device number
– 2112 bit user programmable OTP Cells
CFI (common Flash interface)
100 000 program/erase cycles per block
and read
Enhanced Factory Program command
others
operations
with zero latency
DD
DDQ
PP
= 9 V for fast program
= 1.7 V to 2.0 V for program, erase
= 2.7 V to 3.6 V for I/O buffers
256 Mbit (16 Mb × 16, multiple bank, multilevel, burst)
PP
= V
SS
1.8 V supply, secure Flash memories
Rev 3
Electronic signature
– Manufacturer code: 20h
– Top device codes:
– Bottom device codes
TBGA64 package
– ECOPACK® compliant
M58LT256JST: 885Eh
M58LT256JSB: 885Fh
TBGA64 (ZA)
10 x 13 mm
M58LT256JSB
M58LT256JST
BGA
www.st.com
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