tc55v16256fti TOSHIBA Semiconductor CORPORATION, tc55v16256fti Datasheet

tc55v16256fti

Manufacturer Part Number

tc55v16256fti

Description

262,144-word By 16-bit Cmos Static Ram

Manufacturer

TOSHIBA Semiconductor CORPORATION

Datasheet

1.TC55V16256FTI.pdf (11 pages)

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262,144-WORD BY 16-BIT CMOS STATIC RAM

DESCRIPTION

words by 16 bits. Fabricated using CMOS technology and advanced circuit techniques to provide high speed, it

operates from a single 3.3 V power supply. Chip enable ( CE ) can be used to place the device in a low-power mode,

and output enable ( OE ) provides fast memory access. Data byte control signals ( LB , UB ) provide lower and upper

byte access. This device is well suited to cache memory applications where high-speed access and high-speed

storage are required. All inputs and outputs are directly LVTTL compatible. The TC55V16256JI/FTI is available in

plastic 44-pin SOJ and 44-pin TSOP with 400mil width for high density surface assembly. The TC55V16256JI/FTI

guarantees −40° to 85°C operating temperature so it is suitable for use in wide operating temperature system.

FEATURES

•

PIN ASSIGNMENT

GND

I/O1

I/O2

I/O3

I/O4

I/O5

I/O6

I/O7

I/O8

A15

A14

A13

A12

A16

The TC55V16256JI/FTI is a 4,194,304-bit high-speed static random access memory (SRAM) organized as 262,144

Fast access time (the following are maximum values)

Low-power dissipation

(the following are maximum values)

44 PIN SOJ

Operation (max)

(TC55V16256JI)

TC55V16256JI/FTI-12:12 ns

TC55V16256JI/FTI-15:15 ns

Standby:10 mA (both devices)

Cycle Time

TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS

230

I/O16

I/O15

I/O14

I/O13

GND

I/O12

I/O11

I/O10

I/O9

A10

A11

A17

(TOP VIEW)

200

GND

I/O1

I/O2

I/O3

I/O4

I/O5

I/O6

I/O7

I/O8

A15

A14

A13

A12

A16

44 PIN TSOP

170

150

(TC55V16256FTI)

I/O16

I/O15

I/O14

I/O13

GND

I/O12

I/O11

I/O10

I/O9

A10

A11

A17

•

Single power supply voltage of 3.3 V ± 0.3 V

Fully static operation

All inputs and outputs are LVTTL compatible

Output buffer control using OE

Data byte control using LB (I/O1 to I/O8) and

Package:

UB (I/O9 to I/O16)

SOJ44-P-400-1.27 (JI)

TSOP II44-P-400-0.80 (FTI)

PIN NAMES

I/O1 to I/O16 Data Inputs/Outputs

A0 to A17

LB , UB

GND

TC55V16256JI/FTI-12,-15

Address Inputs

Chip Enable Input

Write Enable Input

Output Enable Input

Data Byte Control Inputs

Power (+3.3 V)

Ground

Not Usable (Input)

2002-01-07 1/11

(Weight: 1.64 g typ)

(Weight: 0.45 g typ)

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tc55v16256fti Summary of contents

Page 1

... I/O12 31 I/O11 GND 30 I/O10 29 I/ A10 24 A11 23 A17 (TC55V16256FTI) TC55V16256JI/FTI-12,-15 (Weight: 1.64 g typ) (Weight: 0.45 g typ) Address Inputs CE Chip Enable Input WE Write Enable Input OE Output Enable Input Data Byte Control Inputs V Power (+3 Ground NU Not Usable (Input) 2002-01-07 1/11 ...

Page 2

... T Operating Temperature opr *: −1.5 V with a pulse width of 20%Kt min (4 ns max) RC **: V + 1.5 V with a pulse width of 20%Kt DD TC55V16256JI/FTI-12,-15 MEMORY CELL ARRAY 1,024 × 256 × 16 (4,194,304) CE SENSE AMP COLUMN DECODER COLUMN ADDRESS BUFFER A10 A11 A12 A16 −0. min (4 ns max) ...

Page 3

DC RECOMMENDED OPERATING CONDITIONS SYMBOL PARAMETER V Power Supply Voltage DD V Input High Voltage IH V Input Low Voltage IL *: −1.0 V with a pulse width of 20%Kt min (4 ns max) RC **: V + 1.0 V ...

Page 4

OPERATING MODE MODE CE Read L Write L L Outputs Disable L Standby Don’t care Note: The NU pin must be left unconnected or tied to GND or a voltage level of less than 0.8 V. You ...

Page 5

AC CHARACTERISTICS ( − − − − 40° to 85°C READ CYCLE SYMBOL PARAMETER t Read Cycle Time RC t Address Access Time ACC t Chip Enable Access Time CO t Output Enable Access Time OE ...

Page 6

TIMING DIAGRAMS (See Note 2) READ CYCLE Address Hi-Z OUT t COE WE WRITE CYCLE 1 ( CONTROLLED) Address (See Note 3) OUT INDETERMINATE D IN ...

Page 7

CE WRITE CYCLE 2 ( CONTROLLED) Address Hi-Z OUT WRITE CYCLE CONTROLLED) Address Hi-Z OUT D IN ...

Page 8

Note: (1) Operating temperature (Ta) is guaranteed for transverse air flow exceeding 400 linear feet per minute. (2) WE remains HIGH for the Read Cycle. ( goes LOW coincident with or after WE goes LOW, the outputs will ...

Page 9

PACKAGE DIMENSIONS SOJ44-P-400-1.27 Weight: 1.64 g (typ) TC55V16256JI/FTI-12,-15 2002-01-07 9/11 ...

Page 10

PACKAGE DIMENSIONS Weight: 0.45 g (typ) TC55V16256JI/FTI-12,-15 2002-01-07 10/11 ...

Page 11

RESTRICTIONS ON PRODUCT USE • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress ...

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