hyb39s256400 Infineon Technologies Corporation, hyb39s256400 Datasheet - Page 16

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hyb39s256400

Manufacturer Part Number
hyb39s256400
Description
256 Mbit Synchronous Dram
Manufacturer
Infineon Technologies Corporation
Datasheet

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Absolute Maximum Ratings
Input / Output voltage relative to V
Power supply voltage
Operating Temperature
Storage temperature range
Power dissipation per SDRAM component
Data out current (short circuit)
Permanent device damage may occur if “Absolute Maximum Ratings” are exceeded.
Functional operation should be restricted to recommended operation conditions.
Exposure to higher than recommended voltage for extended periods of time affect device reliability
Recommended Operation Conditions and DC Eletrical Characteristics
T
Parameter
Supply Voltage
Input high voltage
Input low voltage
Output high voltage
Output low voltage
Input leakage current, any input
(0 V < V
Output leakage current
(DQs are disabled, 0 V < V
INFINEON Technologies
Parameter
Notes:
1. All voltages are referenced to V
2. Vih may overshoot to V
A
= 0 to 70
width < 4.0 ns with 3.3V. Pulse width measured at 50% points with amplitude
reference.
IN
< V
DD
o
C;
, all other inputs = 0 V)
( I
( I
OUT
OUT
OUT
DDQ
= 4.0 mA)
= – 4.0 mA)
< V
+ 2.0 V for pulse width of < 4ns with 3.3V. Vil may undershoot to -2.0 V for pulse
DDQ
SS
.
)
SS
Symbol
V
V
V
V
V
I
I
IL
OL
DD,
IH
IL
OH
OL
V
DDQ
16
Symbol
V
V
T
T
P
I
OS
A
STG
IN,
DD,
D
HYB39S256400/800/160DT(L)/DC(L)
– 0.3
min.
3.0
2.0
2.4
– 5
– 5
V
V
OUT
DDQ
Limit Values
256MBit Synchronous DRAM
min.
typ.
3.3
3.0
0
– 1.0
– 1.0
-55
0
Limit Values
V
DDQ
max.
max.
3.6
0.8
0.4
5
5
+0.3
measured peak to DC
+150
+70
4.6
4.6
50
1
Unit Notes
mA
mA
V
V
V
V
V
Unit
V
V
o
o
W
mA
2002-04-23
C
C
1
1, 2
1, 2
1
1

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