hyb39s256400 Infineon Technologies Corporation, hyb39s256400 Datasheet - Page 19

• Manufacturer Part Number: hyb39s256400
• Description: 256 Mbit Synchronous Dram
• Manufacturer: Infineon Technologies Corporation

Parameter
Row Cycle Time during Auto
Refresh
Activate(a) to Activate(b)
Command period
CAS(a) to CAS(b) Command
period
Refresh Cycle
Refresh Period (8192 cycles)
Self Refresh Exit Time
Read Cycle
Data Out Hold Time
Data Out to Low Impedance Time
Data Out to High Impedance Time
DQM Data Out Disable Latency
Write Cycle
Last Data Input to Precharge
(Write without AutoPrecharge)
Last Data Input to Activate
(Write with AutoPrecharge)
DQM Write Mask Latency
INFINEON Technologies
Symbol
t
DAL,min
t
t
t
t
t
t
t
SREX
t
t
t
DQW
RRD
CCD
t
DQZ
RFC
REF
WR
OH
LZ
HZ
min.
2.5
60
12
12
PC166-
1
–
1
0
3
–
0
333
-6
max. min.
19
64
–
–
–
–
–
6
2
–
–
HYB39S256400/800/160DT(L)/DC(L)
63
14
14
PC133-
1
–
1
3
0
3
–
0
(twr/tck) + (trp/tck)
222
-7
Limit Values
256MBit Synchronous DRAM
max. min.
64
–
–
–
–
–
7
2
–
–
67
15
15
PC133-
1
–
1
3
0
3
–
0
-7.5
333
max. min.
64
–
–
–
–
–
7
2
–
–
70
16
15
PC100-
1
–
1
3
0
3
–
0
222
-8
max.
2002-04-23
64
–
–
–
–
8
2
–
–
Unit
ns
ns
CLK
ms
CLK
ns
ns
ns
CLK
ns
CLK
CLK
5
2,
6
7
8