hyb39s256400d Infineon Technologies Corporation, hyb39s256400d Datasheet - Page 16

• Manufacturer Part Number: hyb39s256400d
• Description: 256-mbit Synchronous Dram
• Manufacturer: Infineon Technologies Corporation

MR
Mode Register Definition
Field
BL
BT
CL
Operating
Mode
Data Sheet
BA1
0
reg. addr
BA0
0
Bits
[2:0]
3
[6:4]
[13:7] w
A12
Type Description
w
w
w
A11
Burst Length
Number of sequential bits per DQ related to one read/write command, see
Chapter 3.3.1
Note: All other bit combinations are RESERVED
000 1
001 2
010 4
011 8
111 Full Page (Sequential burst type only)
Burst Type
See
0
1
CAS Latency
Number of full clocks from read command to first data valid window.
Note: All other bit combinations are RESERVED.
010 2
011 3
Operating Mode
Note: All other bit combinations are RESERVED.
0
1
Table 8
Sequential
Interleaved
burst read/burst write
burst read/single write
A10
MODE
w
for internal address sequence of low order address bits.
A9
A8
(BA[1:0] = 00
16
A7
B
A6
)
CL
A5
w
HYB39S256[40/80/16]0D[C/T](L)
256-MBit Synchronous DRAM
A4
A3
BT
w
Functional Description
10072003-13LE-FGQQ
A2
Rev. 1.02, 2004-02
BL
A1
w
A0