hyb39s256400d Infineon Technologies Corporation, hyb39s256400d Datasheet - Page 21

• Manufacturer Part Number: hyb39s256400d
• Description: 256-mbit Synchronous Dram
• Manufacturer: Infineon Technologies Corporation

Table 12
Parameter
Input Capacitances: CK, CK
Input Capacitance
(A0-A12, BA0, BA1, RAS, CAS, WE, CS, CKE, DQM)
Input/Output Capacitance (DQ)
1) TA = 0 to 70 °C; VDD,VDDQ = 3.3 V ± 0.3 V, f = 1 MHz
2) Capacitance values are shown for TSOP-54 packages. Capacitance values for TFBGA packages are lower by 0.5 pF
Table 13
Parameter
Operating Current
One bank active, Burst length = 1
Precharge Standby Current in Power Down Mode
Precharge Standby Current in Non-Power Down Mode
No Operating Current
active state ( max. 4 banks)
Burst Operating Current
Read command cycling
Auto Refresh Current
Auto Refresh command cycling
Self Refresh Current (standard components)
Self Refresh Mode, CKE=0.2V,
Self Refresh Current (low power components)
Self Refresh Mode, CKE=0.2V,
Data Sheet
Input and Output Capacitances
I
DD
Conditions
t
t
CK
CK
=infinity
=infinity
1)
21
Symbol
C
C
C
I1
I2
I0
HYB39S256[40/80/16]0D[C/T](L)
256-MBit Synchronous DRAM
Values
min.
2.5
2.5
4.0
Electrical Characteristics
2)
10072003-13LE-FGQQ
max.
3.5
3.8
6.0
Rev. 1.02, 2004-02
Symbol
I
I
I
I
I
I
I
I
Unit
pF
pF
pF
DD1
DD2P
DD2N
DD3N
DD3P
DD4
DD5
DD6