m58bw016bt STMicroelectronics, m58bw016bt Datasheet

m58bw016bt

Manufacturer Part Number

m58bw016bt

Description

16 Mbit 512kb X32, Boot Block, Burst 3v Supply Flash Memories

Manufacturer

STMicroelectronics

Datasheet

1.M58BW016BT.pdf (63 pages)

Current page: 1 of 63
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PE4FEATURES SUMMARY

May 2003

SUPPLY VOLTAGE

– V

HIGH PERFORMANCE

– Access Time: 80, 90 and 100ns

– 56MHz Effective Zero Wait-State Burst Read

– Synchronous Burst Reads

– Asynchronous Page Reads

HARDWARE BLOCK PROTECTION

– WP pin Lock Program and Erase

SOFTWARE BLOCK PROTECTION

– Tuning Protection to Lock Program and

OPTIMIZED for FDI DRIVERS

– Fast Program / Erase suspend latency

– Common Flash Interface

MEMORY BLOCKS

– 8 Parameters Blocks (Top or Bottom)

– 31 Main Blocks

LOW POWER CONSUMPTION

– 5µA Typical Deep Power Down

– 60µA Typical Standby

– Automatic Standby after Asynchronous Read

ELECTRONIC SIGNATURE

– Manufacturer Code: 20h

– Top Device Code M58BW016xT: 8836h

– Bottom Device Code M58BW016xB: 8835h

Read

Erase with 64 bit User Programmable Pass-

word (M58BW016B version only)

time < 6µs

DDQ

= 12V for fast Program (optional)

= 2.7V to 3.6V for Program, Erase and

= V

DDQIN

= 2.4V to 3.6V for I/O Buffers

16 Mbit (512Kb x32, Boot Block, Burst)

M58BW016BT, M58BW016BB

M58BW016DT, M58BW016DB

Figure 1. Packages

3V Supply Flash Memories

10 x 8 ball array

LBGA80 (ZA)

PQFP80 (T)

BGA

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