m58bw016bt STMicroelectronics, m58bw016bt Datasheet - Page 47

no-image

m58bw016bt

Manufacturer Part Number
m58bw016bt
Description
16 Mbit 512kb X32, Boot Block, Burst 3v Supply Flash Memories
Manufacturer
STMicroelectronics
Datasheet
Table 27. CFI - Device Voltage and Timing Specification
Note: 1. Bits are coded in Binary Code Decimal, bit7 to bit4 are scaled in Volts and bit3 to bit0 in mV.
Table 28. Device Geometry Definition
2. Bit7 to bit4 are coded in Hexadecimal and scaled in Volts while bit3 to bit0 are in Binary Code Decimal and scaled in 100mV.
3. Not supported.
Address A0-A18
Address A0-A18
2Ch
2Dh
1Ch
1Dh
2Ah
2Bh
2Eh
2Fh
1Bh
1Eh
1Fh
20h
21h
22h
23h
24h
25h
26h
27h
28h
29h
30h
31h
32h
33h
34h
B4h
C6h
27h
36h
00h
00h
00h
00h
00h
Data
Data
1Eh
0Ah
15h
03h
00h
00h
00h
02h
00h
00h
01h
07h
00h
20h
00h
00h
04h
M58BW016BT, M58BW016BB, M58BW016DT, M58BW016DB
(1)
(1)
(3)
(3)
(3)
(3)
(3)
(2)
(2)
2
Device Interface Sync./Async.
Organization Sync./Async.
Page size in bytes, 2
Bit7-0 = number of Erase Block Regions in device
Number (n-1) of blocks of identical size; n=31
Erase Block region information x 256 bytes per
Erase Block (64Kbytes)
Number (n-1) of blocks of identical size; n=8
Erase Block region information x 256 bytes per
Erase Block (8Kbytes)
V
V
V
V
2
2
2
2
2
2
2
2
n
n
n
n
n
n
n
n
n
DD
DD
PP
PP
number of bytes memory size
x typical for buffer write time-out max – Not Available
ms typical time-out for Word, DWord prog – Not Available
ms, typical time-out for max buffer write – Not Available
ms, typical time-out for Erase Block
ms, typical time-out for chip erase – Not Available
x typical for Word Dword time-out max – Not Available
x typical for individual block erase time-out maximum
x typical for chip erase max time-out – Not Available
min
max
min, 2.7V
max, 3.6V
n
Description
Description
47/63

Related parts for m58bw016bt