mt28f004b3vg-8-tet Micron Semiconductor Products, mt28f004b3vg-8-tet Datasheet - Page 20

• Manufacturer Part Number: mt28f004b3vg-8-tet
• Description: 4mb Smart 3 Boot Block Flash Memory
• Manufacturer: Micron Semiconductor Products

Table 12: READ Timing Parameters Electrical Characteristics and Recommended
Commercial Temperature (0°C ≤ T
NOTE:
AC Test Conditions
Input pulse levels. . . . . . . . . . . . . . . . . . . . . . . . . . 0V to 3V
Input rise and fall times . . . . . . . . . . . . . . . . . . . . . . .<10ns
Input timing reference level . . . . . . . . . . . . . . . . . . . . 1.5V
Output timing reference level. . . . . . . . . . . . . . . . . . . 1.5V
Output load. . . . . . . . . . . . . . . . 1TTL gate and CL = 50pF
09005aef8114a789
F45.fm - Rev. E 6/04 EN
AC CHARACTERISTICS
PARAMETER
READ cycle time
Access time from CE#
Access time from OE#
Access time from address
RP# HIGH to output valid delay
OE# or CE# HIGH to output in High-Z
Output hold time from OE#, CE# or address change
RP# LOW pulse width
1. Measurements tested under AC Test Conditions.
2. OE# may be delayed by
AC Operating Conditions
t
ACE minus
A
≤ +70°C) and Extended Temperature (-40°C ≤ T
t
AOE after CE# falls before
1
SMART 3 BOOT BLOCK FLASH MEMORY
20
SYMBOL
t
t
t
RWH
t
t
AOE
t
t
ACE
t
AA
OD
OH
RC
RP
t
ACE is affected.
Micron Technology, Inc., reserves the right to change products or specifications without notice.
MIN
150
80
0
-8/-8 ET
A
≤ +85°C); Vcc = +3.3V ±0.3V
MAX
1,000
80
40
80
25
©2003 Micron Technology, Inc. All rights reserved.
UNITS
ns
ns
ns
ns
ns
ns
ns
ns
4Mb
NOTES
2
2