mt28f004b3vg-8-tet Micron Semiconductor Products, mt28f004b3vg-8-tet Datasheet - Page 23

• Manufacturer Part Number: mt28f004b3vg-8-tet
• Description: 4mb Smart 3 Boot Block Flash Memory
• Manufacturer: Micron Semiconductor Products

Table 13: Recommended DC WRITE/ERASE Conditions
Commercial Temperature (0°C ≤ T
Table 14: WRITE/ERASE Current Drain
Commercial Temperature (0°C ≤ T
NOTE:
09005aef8114a789
F45.fm - Rev. E 6/04 EN
PARAMETER/CONDITION
PARAMETER/CONDITION
V
V
V
Boot block unlock voltage
Vcc WRITE/ERASE lockout voltage
WORD WRITE CURRENT: Vcc SUPPLY
WORD WRITE CURRENT: V
BYTE WRITE CURRENT: Vcc SUPPLY
BYTE WRITE CURRENT: V
ERASE CURRENT: Vcc SUPPLY
ERASE CURRENT: V
ERASE SUSPEND CURRENT: Vcc SUPPLY
(ERASE suspended)
ERASE SUSPEND CURRENT: V
(ERASE suspended)
1. WRITE operations are tested at
2. tested at
3. Absolute WRITE/ERASE protection when
4. When 3.3V
5. All currents are in RMS unless otherwise noted.
6. Applies to MT28F400B3 only.
7. Applies to MT28F004B3 and MT28F400B3 with BYTE = LOW.
8. Parameter is specified when device is not accessed. Actual current draw will be I
9. executed while the device is in erase suspend mode.
PP
PP
PP
WRITE/ERASE lockout voltage
voltage during WRITE/ERASE operation
voltage during WRITE/ERASE operation
V
CC
V
CC
voltages equal to or less than the previous WRITE.
PP
and
SUPPLY
V
PP
PP
PP
SUPPLY
are used,
PP
SUPPLY
SUPPLY
A
A
V
≤ +70°C) and Extended Temperature (-40°C ≤ T
≤ +70°C) and Extended Temperature (-40°C ≤ T
CC
V
/
CC
V
PP
cannot exceed
voltages equal to or less than the previous ERASE, and READ operations are
V
PP
≤
V
PP LK
SMART 3 BOOT BLOCK FLASH MEMORY
.
4
V
PP
23
SYMBOL
SYMBOL
by more than 500mV during WRITE and ERASE operations.
V
V
V
I
V
V
I
I
I
CC
I
I
I
I
PPH
PPH
CC
CC
CC
PPLK
PP
PP
PP
PP
LKO
HH
10
3
4
5
6
7
8
9
1
2
Micron Technology, Inc., reserves the right to change products or specifications without notice.
3.3V V
MAX
MIN
200
3.0
4.5
10
20
20
20
20
25
25
–
2
8
1
PP
A
A
≤ +85°C); Vcc = +3.3V ±0.3V
≤ +85°C); Vcc = +3.3V ±0.3V
CC
10 plus read current if a READ is
5V V
MAX
MAX
12.6
200
1.5
3.6
5.5
20
20
20
20
25
30
10
–
PP
©2003 Micron Technology, Inc. All rights reserved.
UNITS
UNITS
mA
mA
mA
mA
mA
mA
mA
µA
V
V
V
V
V
4Mb
NOTES
NOTES
2
3
5
5
6
6
7