tc58dvm92a3ta00 TOSHIBA Semiconductor CORPORATION, tc58dvm92a3ta00 Datasheet - Page 4

• Manufacturer Part Number: tc58dvm92a3ta00
• Description: 512-mbit 64 M ? 8 Bits Cmos Nand E Prom
• Manufacturer: TOSHIBA Semiconductor CORPORATION

AC CHARACTERISTICS AND RECOMMENDED OPERATING CONDITIONS
(Ta = 0° to 70°C, V
SYMBOL
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
ALEA
WHC
WHR
t
t
t
RHW
t
t
t
t
t
t
t
t
REA
CEA
CEH
t
RHZ
CHZ
REH
t
CRY
CLS
CLH
ALS
ALH
WW
AR2
RST
WC
WH
WP
OH
t
WB
CS
CH
DS
DH
RR
RP
RC
t
RB
IR
R
CLE Setup Time
CLE Hold Time
Write Pulse Width
ALE Setup Time
ALE Hold Time
Data Setup Time
Data Hold Time
Write Cycle Time
Ready to RE Falling Edge
Read Pulse Width
Read Cycle Time
ALE Access Time (ID Read)
Data Output Hold Time
Output-High-impedance-to- RE Falling Edge
Memory Cell Array to Starting Address
ALE Low to RE Low (Read Cycle)
Device Reset Time (Ready/Read/Program/Erase)
CE Setup Time
CE Hold Time
RE Access Time (Serial Data Access)
CE Access Time (Serial Data Access)
CE High Time for Last Address in Serial Read Cycle
RE High to Output High Impedance
CE High to Output High Impedance
RE High Hold Time
RE High to WE Low
RE Last Clock Rising Edge to Busy (in Sequential Read)
CE High to Ready (When interrupted by CE in Read Mode)
WE High Hold Time
WP High to WE Low
WE High to CE Low
WE High to RE Low
WE High to Busy
CC
= 2.7 V to 3.6 V)
PARAMETER
4
MIN
100
100
10
10
25
10
20
10
50
15
20
35
50
10
15
30
30
50
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
0
0
0
0
0
6 / 7 / 12 /
(
TC58DVM92A3TA00
RY
1 + t
MAX
200
200
500
35
45
45
30
20
30
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
/
BY
R
)
UNIT
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
µ s
ns
ns
ns
µ s
µ s
2008-12-10
NOTES
(1) (2)
(2)