tc58dvm92a3ta00 TOSHIBA Semiconductor CORPORATION, tc58dvm92a3ta00 Datasheet - Page 5

• Manufacturer Part Number: tc58dvm92a3ta00
• Description: 512-mbit 64 M ? 8 Bits Cmos Nand E Prom
• Manufacturer: TOSHIBA Semiconductor CORPORATION

AC TEST CONDITIONS
Note:
PROGRAMMING AND ERASING CHARACTERISTICS
(Ta = 0° to 70°C, V
RY
V
Input level
Input pulse rise and fall time
Input comparison level
Output data comparison level
Output load
t
N
t
(1): Refer to Application Note (12) toward the end of this document.
PROG
BERASE
CC
/
SYMBOL
CE
RE
BY
(1) CE High to Ready time depends on the pull-up resister tied to the
(2) Sequential Read is terminated when t
(Refer to Application Note (9) toward the end of this document.)
30 ns,
PARAMETER
Programming Time
Number of Partial Programming Cycles in
the Same Page
Block Erasing Time
525
RY
CC
/
BY
= 2.7 V to 3.6 V)
signal stays Ready.
PARAMETER
CEH
is greater than or equal to 100 ns. If the RE to CE delay is less than
527
C
V
L
CC
2.7 V to 3.6 V
(100 pF) + 1 TTL
CONDITION
− 0.2 V, 0.2 V
V
V
5
3 ns
CC
CC
A
MIN
⎯
⎯
⎯
/ 2
/ 2
t
CEH
Busy
≥ 100 ns
t
CRY
TYP.
300
⎯
RY
3
/
BY
A
pin.
: 0 to 30 ns → Busy signal is not output.
MAX
700
10
*
3
TC58DVM92A3TA00
* : V
UNIT
ms
µ s
⎯
IH
or V
2008-12-10
IL
NOTES
(1)