tc58dvm92a5ta00 TOSHIBA Semiconductor CORPORATION, tc58dvm92a5ta00 Datasheet - Page 5

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tc58dvm92a5ta00

Manufacturer Part Number
tc58dvm92a5ta00
Description
Manufacturer
TOSHIBA Semiconductor CORPORATION
Datasheet

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AC CHARACTERISTICS AND RECOMMENDED OPERATING CONDITIONS
(Ta = 0° to 70°C, V
*1: tCLS and tALS can not be shorter than tWP
*2: tCS should be longer than tWP + 10ns.
SYMBOL
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
ALEA
t
t
t
WHC
WHR
t
CEH
t
REH
CLS
CLH
t
t
ALH
t
t
t
t
t
REA
CEA
CLR
RHZ
CHZ
AR2
t
CRY
RST
ALS
WW
WP
WC
WH
t
WB
OH
CS
CH
DS
DH
RR
RP
RC
t
RB
IR
R
CLE Setup Time (*1)
CLE Hold Time
Write Pulse Width
ALE Setup Time (*1)
ALE Hold Time
Data Setup Time
Data Hold Time
Write Cycle Time
Ready to RE Falling Edge
Read Pulse Width
Read Cycle Time
CLE Low to RE Low
ALE Access Time (ID Read)
Data Output Hold Time
Output-High-impedance-to- RE Falling Edge
Memory Cell Array to Starting Address
ALE Low to RE Low (Read Cycle)
Device Reset Time (Ready/Read/Program/Erase)
RE Access Time (Serial Data Access)
RE High to Output High Impedance
RE High Hold Time
RE Last Clock Rising Edge to Busy (in Sequential Read)
CE Setup Time (*2)
CE Hold Time
WE High Hold Time
WP High to WE Low
CE Access Time (Serial Data Access)
CE High Time for Last Address in Serial Read Cycle
CE High to Output High Impedance
WE High to CE Low
WE High to RE Low
WE High to Busy
CE High to Ready (When interrupted by CE in Read Mode)
CC
= 2.7 V to 3.6 V)
PARAMETER
5
MIN
100
100
20
10
30
10
20
20
10
20
40
15
20
20
40
10
10
15
30
30
10
5
0
5 / 5 / 10 /
TC58DVM92A5TA00
MAX
100
130
500
30
35
40
30
20
25
5
UNIT
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
μ s
ns
ns
ns
μ s
μ s
2010-07-13
NOTES
(1) (2)
(2)

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