tc58dvm92a5tai0 TOSHIBA Semiconductor CORPORATION, tc58dvm92a5tai0 Datasheet - Page 34

• Manufacturer Part Number: tc58dvm92a5tai0
• Description: 512-mbit 64m ? 8 Bits Cmos Nand E Prom Description
• Manufacturer: TOSHIBA Semiconductor CORPORATION

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Failure phenomena for Program and Erase operations
The following possible failure modes should be considered when implementing a highly reliable system.
Block
Page
Single Bit
•
•
Do not turn off the power before write/erase operation is complete. Avoid using the device when the battery
is low. Power shortage and/or power failure before write/erase operation is complete will cause loss of data
and/or damage to data.
The device may fail during a Program or Erase operation.
ECC: Error Correction Code.1 bit correction per 512 Bytes is necessary.
Block Replacement
Program
Erase
When an error occurs in an Erase operation, prevent future accesses to this bad block
(again by creating a table within the system or by using another appropriate scheme).
memory
FAILURE MODE
Buffer
Erase Failure
Programming
Failure
Programming
Failure
1 → 0
Error occurs
Status Read after Erase → Block Replacement
Status Read after Program → Block Replacement
ECC
Figure 26.
DETECTION AND COUNTERMEASURE SEQUENCE
Block A
Block B
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reprogram the data into another Block (Block
B) by loading from an external buffer. Then,
prevent further system accesses to Block A (by
creating a bad block table or by using an
another appropriate scheme).
When an error happens in Block A, try to
TC58DVM92A5TAI0
2010-04-23