tc58dvm92a5baj3 TOSHIBA Semiconductor CORPORATION, tc58dvm92a5baj3 Datasheet - Page 4

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tc58dvm92a5baj3

Manufacturer Part Number
tc58dvm92a5baj3
Description
512-mbit 64m ? 8 Bits Cmos Nand E Prom Description
Manufacturer
TOSHIBA Semiconductor CORPORATION
Datasheet

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Quantity
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Part Number:
TC58DVM92A5BAJ3
Manufacturer:
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Quantity:
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Part Number:
TC58DVM92A5BAJ3
Manufacturer:
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Quantity:
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VALID BLOCKS
RECOMMENDED DC OPERATING CONDITIONS
DC CHARACTERISTICS
N
(1) The device occasionally contains unusable blocks. Refer to Application Note (14) toward the end of this document.
(2) The first block (block address #00) is guaranteed to be a valid block at the time of shipment.
V
V
V
*
I
I
I
I
I
I
I
I
I
V
V
I
IL
LO
CCO1
CCO3
CCO4
CCO5
CCO7
CCO8
CCS
OL
CC
IH
IL
OH
OL
VB
SYMBOL
SYMBOL
SYMBOL
− 2 V (pulse width lower than 20 ns)
(
RY
/
BY
)
Number of Valid Blocks
Power Supply Voltage
High Level input Voltage
Low Level Input Voltage
Input Leakage Current
Output Leakage Current
Operating Current (Serial Read)
Operating Current
(Command Input)
Operating Current (Data Input)
Operating Current
(Address Input)
Programming Current
Erasing Current
Standby Current
High Level Output Voltage
Low Level Output Voltage
Output Current of
(1)
PARAMETER
RY
(Ta = -40° to 85°C, V
PARAMETER
PARAMETER
/
BY
pin
V
V
t
t
t
I
I
V
CE = V
CE = V
cycle
cycle
cycle
OH
OL
IN
OUT
OL
= 2.1 mA
= 0 V to V
= − 400 µ A
= 0.4 V
= 40 ns
= 40 ns
= 40 ns
= 0 V to V
IL
CC
, I
OUT
− 0.2 V
4
CONDITION
CC
CC
CC
= 0 mA, t
= 2.7 V to 3.6 V)
,
WP = 0 V/V
V
cycle
CC
− 0.3 *
4016
MIN
MIN
2.7
× 0.78
= 40 ns
CC
TYP.
TYP.
MIN
2.4
TC58DVM92A5BAJ3
V
TYP.
V
CC
8
CC
MAX
4096
MAX
3.6
× 0.22
+ 0.3
MAX
2010-06-16
± 10
± 10
0.4
20
20
20
20
20
20
50
Blocks
UNIT
UNIT
V
V
V
UNIT
mA
mA
mA
mA
mA
mA
mA
µ A
µ A
µ A
V
V

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