e28f016xd Intel Corporation, e28f016xd Datasheet

e28f016xd

Manufacturer Part Number

e28f016xd

Description

16-mbit 1 Mbit X 16 Dram-interface Flash Memory

Manufacturer

Intel Corporation

Datasheet

1.E28F016XD.pdf (54 pages)

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Intel’s 28F016XD 16-Mbit flash memory is a revolutionary architecture which is the ideal choice for designing

truly revolutionary high-performance products. Combining its DRAM-like read performance and interface with

the intrinsic nonvolatility of flash memory, the 28F016XD eliminates the traditional redundant memory

paradigm of shadowing code from a slow nonvolatile storage source to a faster execution memory, such as

DRAM, for improved system performance. The innovative capabilities of the 28F016XD enable the design of

direct-execute code and mass storage data/file flash memory systems.

The 28F016XD’s DRAM-like interface with a multiplexed address bus, flexible V

saving features, extended cycling, fast program and read performance, symmetrically-blocked architecture,

and selective block locking provide a highly flexible memory component suitable for resident flash component

arrays on the system board or SIMMs. The DRAM-like interface with RAS# and CAS# control inputs allows

for easy migration to flash memory in existing DRAM-based systems. The 28F016XD’s dual read voltage

allows the same component to operate at either 3.3V or 5.0V V

minimizes external circuitry in minimal-chip, space critical designs, while the 12.0V V

program/erase performance. The x16 architecture allows optimization of the memory-to-processor interface.

Its high read performance combined with flexible block locking enable both storage and execution of

operating systems/application software and fast access to large data tables. The 28F016XD is manufactured

on Intel’s 0.6 µm ETOX IV process technology.

85 ns Access Time (t

Multiplexed Address Bus

No-Glue Interface to Many Memory

Controllers

SmartVoltage Technology

0.33 MB/sec Write Transfer Rate

x16 Architecture

December 1996

Supports both Standard and Fast-

Page-Mode Accesses

RAS# and CAS# Control Inputs

User-Selectable 3.3V or 5V V

User-Selectable 5V or 12V V

DRAM-INTERFACE FLASH MEMORY

RAC

)

16-MBIT (1 MBIT x 16)

28F016XD

56-Lead TSOP Type I Package

Backwards-Compatible with 28F008SA

Command Set

2 µA Typical Deep Power-Down Current

1 mA Typical I

Mode

32 Separately-Erasable/Lockable

64-Kbyte Blocks

1 Million Erase Cycles per Block

State-of-the-Art 0.6 µm ETOX™ IV Flash

Technology

. Programming voltage at 5.0V V

Active Current in Static

and V

Order Number: 290533-004

option maximizes

voltages, power

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