mxd1210 Maxim Integrated Products, Inc., mxd1210 Datasheet

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mxd1210

Manufacturer Part Number
mxd1210
Description
Nonvolatile Ram Controller Integrated Products
Manufacturer
Maxim Integrated Products, Inc.
Datasheet

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The MXD1210 nonvolatile RAM controller is a very low-
power CMOS circuit that converts standard (volatile)
CMOS RAM into nonvolatile memory. It also continually
monitors the power supply to provide RAM write protec-
tion when power to the RAM is in a marginal (out-of-
tolerance) condition. When the power supply begins to
fail, the RAM is write protected, and the device switch-
es to battery-backup mode.
19-0154; Rev 1; 3/96
For free samples & the latest literature: http://www.maxim-ic.com, or phone 1-800-998-8800
_________________Pin Configurations
_______________General Description
TOP VIEW
µP Systems
Computers
Embedded Systems
VBATT1
VBATT1
V
V
GND
GND
N.C.
N.C.
N.C.
N.C.
TOL
TOL
CCO
CCO
________________________________________________________________ Maxim Integrated Products
1
2
3
4
1
2
3
4
5
6
7
8
MXD1210
Wide SO
MXD1210
DIP/SO
Applications
16
15
14
13
12
11
10
8
7
6
5
9
V
VBATT2
CEO
CE
N.C.
V
N.C.
VBATT2
N.C.
CEO
N.C.
CE
CCI
CCI
Nonvolatile RAM Controller
____________________________Features
*Contact factory for dice specifications.
__________Typical Operating Circuit
______________Ordering Information
MXD1210CPA
MXD1210CSA
MXD1210CWE
MXD1210C/D
MXD1210EPA
MXD1210ESA
MXD1210EWE
MXD1210MJA
+5V
DECODER
Battery Backup
Memory Write Protection
230µA Operating-Mode Quiescent Current
2nA Backup-Mode Quiescent Current
Battery Freshness Seal
Optional Redundant Battery
Low Forward-Voltage Drop on V
5% or 10% Power-Fail Detection Options
Tests Battery Condition During Power-Up
8-Pin SO Available
FROM
V
PART
CCI
CE
8
5
4
MXD1210
1
7
6
3
2
-40°C to +85°C
-40°C to +85°C
-40°C to +85°C
-55°C to +125°C
TEMP. RANGE
0°C to +70°C
0°C to +70°C
0°C to +70°C
0°C to +70°C
VBATT2
VBATT1
V
CCO
CC
CE
GND
8 Plastic DIP
8 SO
16 Wide SO
Dice*
8 Plastic DIP
8 SO
16 Wide SO
8 CERDIP
Supply Switch
PIN-PACKAGE
CMOS
RAM
V
CC
1

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mxd1210 Summary of contents

Page 1

... Rev 1; 3/96 _______________General Description The MXD1210 nonvolatile RAM controller is a very low- power CMOS circuit that converts standard (volatile) CMOS RAM into nonvolatile memory. It also continually monitors the power supply to provide RAM write protec- tion when power to the RAM marginal (out-of- tolerance) condition ...

Page 2

... CERDIP (derate 8.00mW/°C above +70°C) .........640mW , VBATT1, VBATT2) Operating Temperature Ranges + 0.3V CCI MXD1210C_ _ ..................................................... 0°C to +70°C MXD1210E_ _ .................................................. -40°C to +85°C MXD1210MJA ................................................ -55°C to +125°C Storage Temperature Range ........................... -65°C to +150°C Lead Temperature (soldering, 10sec) ............................ +300°C CONDITIONS TOL = GND ...

Page 3

... Note the maximum average load current the MXD1210 can supply to the memories. CCO1 Note the maximum average load current the MXD1210 can supply to the memories in battery-backup mode. CCO2 Note 4: CEO can sustain leakage current only in battery-backup mode. Note 5: Guaranteed by design. ...

Page 4

... Battery 1 positive connection TOL Tolerance select pin GND Ground CE Chip-enable input CEO Chip-enable output VBATT2 Battery 2 positive connection V 5V power supply to chip CCI N.C. No connect, not internally connected FRESHNESS- SEAL MODE MXD1210 VOLTAGE LEVEL DETECTION FUNCTION P V CCO P N GND GND CEO CEO CONTROL ...

Page 5

... VBATT1 and VBATT2 should exceed 0.1V/ s. The bat- teries will maintain their full shelf-life while installed in the system. The Typical Operating Circuit shows the MXD1210 con- nected in order to write protect the RAM when V less than 4.75V, and to provide battery backup to the supply. ...

Page 6

Nonvolatile RAM Controller -O.2V BATT V IH CEO REC 4.75V 4.5V 4.25V CCI Figure 2. Power-Up Timing Diagram 6 _______________________________________________________________________________________ ...

Page 7

Topography V VBATT2 CCI V CCO VBATT1 TOL GND 0.080" TRANSISTOR COUNT: 1436; LEAVE SUBSTRATE UNCONNECTED. _______________________________________________________________________________________ Nonvolatile RAM Controller 0.121" ...

Page 8

Nonvolatile RAM Controller ________________________________________________________Package Information 0.127mm 0.004in Maxim cannot assume responsibility for use of any circuitry other than circuitry entirely embodied in a ...

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