mte125n20e Freescale Semiconductor, Inc, mte125n20e Datasheet
mte125n20e
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mte125n20e Summary of contents
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... Preferred devices are Motorola recommended choices for future use and best overall value. REV 1 Motorola TMOS Power MOSFET Transistor Device Data Motorola, Inc. 1995 Order this document by MTE125N20E/D MTE125N20E Motorola Preferred Device TMOS POWER FET 125 AMPERES 200 VOLTS R DS(on) = 0.015 OHM ...
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... MTE125N20E ELECTRICAL CHARACTERISTICS ( 25°C unless otherwise noted) Characteristic OFF CHARACTERISTICS Drain–Source Breakdown Voltage ( Vdc 250 Adc) Temperature Coefficient (Positive) Zero Gate Voltage Drain Current ( 200 Vdc Vdc 200 Vdc Vdc 125°C) Gate– ...
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... Figure 4. On–Resistance versus Drain Current 100000 10000 1000 100 10 1 100 125 150 DRAIN–TO–SOURCE VOLTAGE (VOLTS) Figure 6. Drain–To–Source Leakage Current MTE125N20E 100°C 25° – 55° 120 160 200 ...
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... MTE125N20E Switching behavior is most easily modeled and predicted by recognizing that the power MOSFET is charge controlled. The lengths of various switching intervals ( t) are deter- mined by how fast the FET input capacitance can be charged by current from the generator. The published capacitance data is difficult to use for calculat- ing rise and fall because drain– ...
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... The energy rating decreases non–linearly with an in- crease of peak current in avalanche and peak junction temperature 25°C 0.5 0.6 0.7 0.8 0 SOURCE–TO–DRAIN VOLTAGE (VOLTS) MTE125N20E d(off) t d(on) 10 100 GATE RESISTANCE (OHMS) 1.1 1.2 5 ...
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... MTE125N20E 1000 SINGLE PULSE 25°C 100 10 R DS(on) LIMIT THERMAL LIMIT PACKAGE LIMIT 1 0 DRAIN–TO–SOURCE VOLTAGE (VOLTS) Figure 11. Maximum Rated Forward Biased Safe Operating Area 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 SINGLE PULSE 0.001 1.0E–05 1.0E–04 Figure 14. Diode Reverse Recovery Waveform ...
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... Motorola TMOS Power MOSFET Transistor Device Data PACKAGE DIMENSIONS STYLE 1: 0.2 Nm PIN 1. SOURCE 2. GATE 3. DRAIN 4. SOURCE 2 SOT–227B MTE125N20E NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS. MILLIMETERS INCHES DIM MIN MAX MIN MAX A 31.50 31.70 1.240 1 ...
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... JAPAN: Nippon Motorola Ltd.; Tatsumi–SPD–JLDC, Toshikatsu Otsuki, 6F Seibu–Butsuryu–Center, 3–14–2 Tatsumi Koto–Ku, Tokyo 135, Japan. 03–3521–8315 HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298 *MTE125N20E/D* Motorola TMOS Power MOSFET Transistor Device Data MTE125N20E/D ...