tza3036u-t-n1 NXP Semiconductors, tza3036u-t-n1 Datasheet

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tza3036u-t-n1

Manufacturer Part Number
tza3036u-t-n1
Description
Sdh/sonet Stm1/oc3 Transimpedance Amplifier
Manufacturer
NXP Semiconductors
Datasheet
1. General description
2. Features
3. Applications
CAUTION
The TZA3036 is a transimpedance amplifier with Automatic Gain Control (AGC), designed
to be used in STM1/OC3 fiber optic links. It amplifies the current generated by a photo
detector (PIN diode or avalanche photodiode) and converts it to a differential output
voltage. It offers a current mirror of average photo current for RSSI monitoring to be used
in SFF-8472 compliant modules.
The low noise characteristics makes it suitable for STM1/OC3 applications, but also for
FTTx applications.
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TZA3036
SDH/SONET STM1/OC3 transimpedance amplifier
Rev. 01 — 24 March 2006
Low equivalent input noise, typically 12 nA (RMS)
Wide dynamic range, typically 0.18 A to 1.5 mA (p-p)
Differential transimpedance of 69 k (typical)
Bandwidth from DC to 160 MHz (typical)
Differential outputs
On-chip (AGC) with possibility of external control
Single supply voltage 3.3 V; range 2.9 V to 3.6 V
Bias voltage for PIN diode
On-chip current mirror of average photo current for RSSI monitoring
Identical ports available on both sides of die for easy bond layout and RF polarity
selection
Digital fiber optic receiver modules in telecommunications transmission systems, in
high speed data networks or in FTTx systems.
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
Product data sheet

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tza3036u-t-n1 Summary of contents

Page 1

TZA3036 SDH/SONET STM1/OC3 transimpedance amplifier Rev. 01 — 24 March 2006 1. General description The TZA3036 is a transimpedance amplifier with Automatic Gain Control (AGC), designed to be used in STM1/OC3 fiber optic links. It amplifies the current generated by ...

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... Philips Semiconductors 4. Ordering information Table 1. Type number TZA3036U 5. Block diagram C VCC I IDREF_MON IDREF_MON DREF R IDREF_MON C DREF D PHOTO I PIN IPHOTO 2 Fig 1. Block diagram TZA3036_1 Product data sheet SDH/SONET STM1/OC3 transimpedance amplifier Ordering information Package Name Description - bare die, dimensions approximately ...

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Philips Semiconductors 6. Pinning information 6.1 Pinning Fig 2. Pin configuration 6.2 Pin description Table 2. Bonding pad description Bonding pad locations with respect to the center of the die (see Symbol Pad X DREF 1 493.6 IPHOTO 2 493.6 ...

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Philips Semiconductors Table 2. Bonding pad description Bonding pad locations with respect to the center of the die (see Symbol Pad X GND 11 486.4 GND 12 346.4 OUTQ 13 206.4 OUT 14 66.4 AGC 15 73.6 IDREF_MON 16 213.6 ...

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Philips Semiconductors The parasitic capacitance can be minimized through: 1. Reducing the capacitance of the PIN diode. This is achieved by proper choice of PIN diode and typically a high reverse voltage. 2. Reducing the parasitics around the input pad. ...

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Philips Semiconductors 7.2 Automatic gain control The TZA3036 transimpedance amplifier can handle input currents from 0. 1.5 mA which is equivalent to a dynamic range (electrical equivalent with 39 dB optical). At low input currents, ...

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Philips Semiconductors For applications where the transimpedance is controlled by the TIA it is advised to leave the AGC pads unconnected to achieve fast attack and decay times. The AGC function can be overruled by applying a voltage to pad ...

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Philips Semiconductors 8. Limiting values Table 3. In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter tot T amb stg 9. Characteristics Table 4. Characteristics Typical values ...

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Philips Semiconductors Table 4. Characteristics …continued Typical values and V j range and supply voltage range; all voltages are measured with respect to ground; unless otherwise specified. Symbol Parameter Bias voltage: pad DREF R resistance ...

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... Fig 8. Application diagram highlighting flexible pad layout TZA3036_1 Product data sheet SDH/SONET STM1/OC3 transimpedance amplifier Figure OUT OUT Rev. 01 — 24 March 2006 TZA3036 IDREF_MON C PIN TZA3036U OUTQ GND 001aad082 © Koninklijke Philips Electronics N.V. 2006. All rights reserved ...

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DC- PATTERN GENERATOR DATA 55 CLOCK Total impedance of the test circuit ( calculated by the equation Z tot(tc) Typical values 2200 , Z = 300 . i Fig 9. Test circuit NETWORK ANALYZER ...

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Philips Semiconductors 12. Bare die information Fig 10. Bonding pad locations Table 5. Parameter Glass passivation Bonding pad dimension Metallization Thickness Die dimension Backing Attach temperature Attach time 13. Package outline Not applicable. TZA3036_1 Product data sheet SDH/SONET STM1/OC3 transimpedance ...

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Philips Semiconductors 14. Handling information 14.1 General Inputs and outputs are protected against electrostatic discharge in normal handling. However completely safe you must take normal precautions appropriate to handling MOS devices; see JESD625-A and/or IEC61340-5 . 14.2 Additional ...

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Philips Semiconductors 17. Legal information 17.1 Data sheet status [1][2] Document status Product status Objective [short] data sheet Development Preliminary [short] data sheet Qualification Product [short] data sheet Production [1] Please consult the most recently issued document before initiating or ...

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Philips Semiconductors 19. Contents 1 General description . . . . . . . . . . . . . . . . . . . . . . 1 2 Features . . . . . . . . ...

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