tza3026 NXP Semiconductors, tza3026 Datasheet

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tza3026

Manufacturer Part Number
tza3026
Description
Tza3026 Sdh/sonet Stm4/oc12 Transimpedance Amplifier
Manufacturer
NXP Semiconductors
Datasheet
1. General description
2. Features
3. Applications
4. Ordering information
The TZA3026 is a transimpedance amplifier with Automatic Gain Control (AGC), designed
to be used in STM4/OC12 fiber optic links. It amplifies the current generated by a photo
detector (PIN diode or avalanche photodiode) and converts it to a differential output
voltage. It offers a current mirror of average photo current for RSSI monitoring to be used
in SFF8472 compliant modules.
The low noise characteristics makes it suitable for STM4/OC12 applications, but also for
FTTx applications.
Table 1:
Type number
TZA3026U
TZA3026
SDH/SONET STM4/OC12 transimpedance amplifier
Rev. 01 — 2 May 2005
Low equivalent input noise current, typically 67 nA (RMS)
Wide dynamic range, typically 0.85 A to 1.5 mA (p-p)
Differential transimpedance of 14 k (typical)
Bandwidth from DC to 650 MHz (typical)
Differential outputs
On-chip AGC with possibility of external control
Single supply voltage 3.3 V, range 2.9 V to 3.6 V
Bias voltage for PIN diode
Current output of average photo current for RSSI monitoring
Identical ports available on both sides of die for easy bond layout and RF polarity
selection
Digital fiber optic receiver modules in telecommunications transmission systems, in
high speed data networks or in FTTx systems
Ordering information
Package
Name
-
Description
bare die, dimensions approximately
0.82 mm
1.3 mm
Product data sheet
Version
-

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tza3026 Summary of contents

Page 1

... Rev. 01 — 2 May 2005 1. General description The TZA3026 is a transimpedance amplifier with Automatic Gain Control (AGC), designed to be used in STM4/OC12 fiber optic links. It amplifies the current generated by a photo detector (PIN diode or avalanche photodiode) and converts differential output voltage ...

Page 2

... DREF R 300 DREF GAIN CONTROL single-ended to differential converter low noise amplifier Rev. 01 — 2 May 2005 TZA3026 TZA3026 BIASING PEAK DETECTOR output buffers 10, 11, 12 GND © Koninklijke Philips Electronics N.V. 2005. All rights reserved. OUTQ OUT 001aac617 ...

Page 3

... OUT; use pad 7 or pad 13 data output; use pad 8 or pad 14 ground; connect together pads 9, 10, 11 and pad 12 as many as possible ground; connect together pads 9, 10, 11 and pad 12 as many as possible Rev. 01 — 2 May 2005 TZA3026 IDREF_MON ...

Page 4

... Excellent receiver sensitivity is achieved by minimizing transimpedance amplifier noise. The TZA3026 has a wide dynamic range to handle the signal current generated by the PIN diode which can vary from 0. 1.5 mA (p-p). This is implemented by an AGC loop which reduces the preamplifier feedback resistance so that the amplifier remains linear over the whole input range ...

Page 5

... DREF Figure DREF DREF 300 IPHOTO TZA3026 negative bias voltage 001aac620 Fig 4. The PIN diode connected between the input and a negative supply voltage © Koninklijke Philips Electronics N.V. 2005. All rights reserved. can ...

Page 6

... To achieve the dynamic range, the gain of the amplifier depends on the level of the input signal. This is achieved in the TZA3026 by an AGC loop. The AGC loop comprises a peak detector and a gain control circuit. The peak detector detects the amplitude of the signal and stores hold capacitor ...

Page 7

... This is depicted in CC for proper functioning transimpedance ( 0.3V 0. bias resistor. By connecting a resistor to the IDREF_MON Rev. 01 — 2 May 2005 TZA3026 Figure 001aac623 0.7V 0. (V) AGC © Koninklijke Philips Electronics N.V. 2005. All rights reserved. 7. The bias ...

Page 8

... Min Typ 2.9 3.3 = 100 ; - 18 IDREF_MON - +25 9 100 = 3.3 V 440 650 [ 450 MHz - 125 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. TZA3026 Max Unit +3 +4.0 mA +10 mA +0.2 mA +4.0 mA 300 mW +85 C 150 C +150 C Max Unit 3 ...

Page 9

... DREF 100 - 100 125 - 250 - 100 - 300 - 300 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. TZA3026 Max Unit 350 - / C +1500 A 1000 nA 500 ...

Page 10

... Fig 8. Application diagram highlighting flexible pad lay out 9397 750 14763 Product data sheet SDH/SONET STM4/OC12 transimpedance amplifier Figure IDREF_MON OUTQ 001aac624 Rev. 01 — 2 May 2005 TZA3026 IDREF_MON C PIN C TZA3026U OUTQ OUT GND © Koninklijke Philips Electronics N.V. 2005. All rights reserved. 001aac625 ...

Page 11

... IN Fig 9. Test circuit NETWORK ANALYZER S-PARAMETER TEST SET PORT1 PORT2 OUT 8.2 k TZA3026 330 IPHOTO OUTQ 10, 11, 12 GND = where s is the insertion loss of ports 1 and ...

Page 12

... PSG (PhosphoSilicate Glass) on top of 0.8 m silicon nitride minimum dimension of exposed metallization (pad size = 100 m metallization 2.8 m AlCu 380 m nominal 820 m 1300 silicon; electrically connected to GND potential through substrate contacts <440 C; recommended die attach is glue <15 s Rev. 01 — 2 May 2005 TZA3026 (0, ...

Page 13

... TZA3026_1 20050502 9397 750 14763 Product data sheet SDH/SONET STM4/OC12 transimpedance amplifier Data sheet status Change notice Product data sheet - Rev. 01 — 2 May 2005 TZA3026 Doc. number Supersedes 9397 750 14763 - © Koninklijke Philips Electronics N.V. 2005. All rights reserved ...

Page 14

... Trademarks Notice — All referenced brands, product names, service names and trademarks are the property of their respective owners. Rev. 01 — 2 May 2005 TZA3026 © Koninklijke Philips Electronics N.V. 2005. All rights reserved ...

Page 15

... No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Published in The Netherlands TZA3026 Date of release: 2 May 2005 Document number: 9397 750 14763 ...

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