led760-40k32

Manufacturer Part Numberled760-40k32
DescriptionStem Type Led With High Beam
ManufacturerRoithner LaserTechnik GmbH
led760-40k32 datasheet
 


Page 1/1

Download datasheet (94Kb)Embed
LED760-40K32
LED760-40K32 is AlGaAs LED mounted on TO-46 stem with ball glass lens,
being designed for high beam uses.
On forward bias it emits a spectral band of radiation, which peaks at 760 nm.
♦Features
- High radiated intensity
- High Reliability
♦Specifications
- Product Name
Infrared LED Lamp
- Type No.
LED760-40K32
- Chip Spec.
- Material
AlGaAs
- Peak Wavelength
760 nm
- Package
- Type
TO-46 stem
- Lens
Ball glass lens
- Cap
Gold plated
♦Absolute Maximum Ratings
Item
Power Dissipation
Forward Current
Pulse Forward Current
Reverse Voltage
Operating Temperature
Storage Temperature
Soldering Temperature
Pulse Forward Current condition: Duty = 1% and Pulse Width=10 µs.
Soldering condition: Soldering condition must be completed within 3 seconds at 260° C
♦Electro-Optical Characteristics
Item
Symbol
Forward Voltage
V
Reverse Current
I
Total Radiated Power
P
Radiant Intensity
I
λ
Peak Wavelength
∆λ
Half Width
θ
Viewing Half Angle
Rise Time
••
Fall Time
••
Total Radiated Power is measured by Photodyne #500
Radiant Intensity is measured by Tektronix J-6512.
ROITHNER LASERTECHNIK
A-1040 VIENNA, SCHOENBRUNNER STRASSE 7, AUSTRIA
TEL: +43 -1- 586 52 43-0 FAX: +43 -1- 586 52 43-44
office@roithner-laser.com
stem type LED with high beam
Symbol
Maximum Rated Value
P
200
D
I
100
F
I
500
FP
V
5
R
T
-30 ~ +80
OPR
T
-30 ~ +100
STG
T
260
SOL
Condition
Minimum
I
= 50 mA
F
F
V
= 5V
R
R
I
= 50 mA
6
O
F
I
= 50 mA
E
F
740
I
= 50 mA
F
P
I
= 50 mA
F
I
= 50 mA
1/2
F
I
= 50 mA
F
I
= 50 mA
F
www.roithner-laser.com
♦Outer dimension•Unit:mm•
Unit
Ambient Temperature
mW
Ta = 25° C
mA
Ta = 25° C
mA
Ta = 25° C
V
Ta = 25° C
°C
°C
°C
Typical
Maximum
Unit
1.85
2.00
V
10
uA
10
mW
50.0
mW/sr
760
780
nm
30
nm
±10
deg.
80
ns
80
ns