led760-40k32 Roithner LaserTechnik GmbH, led760-40k32 Datasheet

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led760-40k32

Manufacturer Part Number
led760-40k32
Description
Stem Type Led With High Beam
Manufacturer
Roithner LaserTechnik GmbH
Datasheet
- High radiated intensity
- High Reliability
- Product Name
- Type No.
- Chip Spec.
- Material
- Peak Wavelength
- Package
- Type
- Lens
- Cap
Forward Voltage
Reverse Current
Total Radiated Power
Radiant Intensity
Peak Wavelength
Half Width
Viewing Half Angle
Rise Time
Fall Time
LED760-40K32
LED760-40K32 is AlGaAs LED mounted on TO-46 stem with ball glass lens,
being designed for high beam uses.
On forward bias it emits a spectral band of radiation, which peaks at 760 nm.
♦Features
♦Specifications
♦Absolute Maximum Ratings
Power Dissipation
Forward Current
Pulse Forward Current
Reverse Voltage
Operating Temperature
Storage Temperature
Soldering Temperature
♦Electro-Optical Characteristics
Pulse Forward Current condition: Duty = 1% and Pulse Width=10 µs.
Soldering condition: Soldering condition must be completed within 3 seconds at 260° C
Total Radiated Power is measured by Photodyne #500
Radiant Intensity is measured by Tektronix J-6512.
Item
Item
A-1040 VIENNA, SCHOENBRUNNER STRASSE 7, AUSTRIA
ROITHNER LASERTECHNIK
office@roithner-laser.com
TEL: +43 -1- 586 52 43-0 FAX: +43 -1- 586 52 43-44
Infrared LED Lamp
LED760-40K32
AlGaAs
760 nm
TO-46 stem
Ball glass lens
Gold plated
Symbol
θ
P
∆λ
••
••
V
λ
I
I
Symbol
R
E
P
1/2
O
F
T
T
T
P
I
V
OPR
STG
SOL
I
FP
F
D
R
I
I
I
I
I
I
I
I
Condition
F
F
F
F
F
F
F
F
V
= 50 mA
= 50 mA
= 50 mA
= 50 mA
= 50 mA
= 50 mA
= 50 mA
= 50 mA
R
Maximum Rated Value
= 5V
stem type LED with high beam
-30 ~ +100
-30 ~ +80
200
100
500
260
5
Minimum
www.roithner-laser.com
740
6
Typical
Unit
mW
mA
mA
1.85
50.0
°C
°C
°C
760
±10
V
10
30
80
80
♦Outer dimension•Unit:mm•
Ambient Temperature
Maximum
2.00
780
10
Ta = 25° C
Ta = 25° C
Ta = 25° C
Ta = 25° C
mW/sr
deg.
Unit
mW
nm
nm
uA
ns
ns
V

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