bts5235l Infineon Technologies Corporation, bts5235l Datasheet

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bts5235l

Manufacturer Part Number
bts5235l
Description
Smart High-side Power Switch
Manufacturer
Infineon Technologies Corporation
Datasheet

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Part Number
Manufacturer
Quantity
Price
Part Number:
BTS5235L
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
D a t a S h e e t, V 1. 0 , D e c 20 0 5
BTS 5235L
S m a r t H i g h - S i d e P o w e r S w i t c h
P R O F E T
Tw o C ha nn e l s , 60 m Ω
A u t o m o t i v e P o w e r

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bts5235l Summary of contents

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BTS 5235L ...

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Table of Contents Product Summary . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...

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Smart High-Side Power Switch PROFET Product Summary The BTS 5235L is a dual channel high-side power switch in P-DSO-12-2 package providing embedded protective functions. The power transistor is built by a N-channel vertical power MOSFET with charge pump. The device ...

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Protective Functions • Reverse battery protection without external components • Short circuit protection • Overload protection • Multi-step current limitation • Thermal shutdown with restart • Thermal restart at reduced current limitation • Over voltage protection without external resistor • ...

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Overview The BTS 5235L is a dual channel high-side power switch (two times 60 mΩ) in P-DSO-12-2 power package providing embedded protective functions. The Enhanced IntelliSense pins IS1 and IS2 provide a sophisticated diagnostic feedback signal including current sense ...

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Terms Following figure shows all terms used in this data sheet IN1 I V IN2 IN1 V IN2 I IS1 I V IS2 IS1 V IS2 I SEN V SEN Figure 2 Terms In all tables ...

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Pin Configuration 2.1 Pin Assignment BTS 5235L GND IN1 IS1 IS2 IN2 VBB Figure 3 Pin Configuration P-DSO-12-2 2.2 Pin Definitions and Functions Pin Symbol I/O 2 IN1 I 5 IN2 I 3 IS1 O 4 IS2 O 7 ...

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Electrical Characteristics 3.1 Maximum Ratings Stresses above the ones listed here may affect device reliability or may cause permanent damage to the device. Unless otherwise specified °C j Pos. Parameter Supply Voltage 3.1.1 Supply voltage 3.1.2 ...

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Unless otherwise specified °C j Pos. Parameter Temperatures 3.1.13 Junction Temperature 3.1.14 Dynamic temperature increase while switching 3.1.15 Storage Temperature ESD Susceptibility 3.1.16 ESD susceptibility HBM and describe the complete circuit impedance including line, ...

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Block Description and Electrical Characteristics 4.1 Power Stages The power stages are built by N-channel vertical power MOSFETs (DMOS) with charge pumps. 4.1.1 Output On-State Resistance R The on-state resistance DS(ON) temperature T . Figure 4 shows that dependencies ...

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A high signal at the input pin causes the power DMOS to switch on with a dedicated slope, which is optimized in terms of EMC emission OUT 90% 70% 30% 10% Figure 6 Switching a Load ...

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V OUT OUT(CL Figure 8 Switching an Inductance Maximum Load Inductance While demagnetization of inductive loads, energy has to be dissipated in the BTS 5235L. This energy can be calculated with following equation: V ...

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Figure 9 Maximum Energy Dissipation Single Pulse, Data Sheet Smart High-Side Power Switch Block Description and Electrical Characteristics ...

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Electrical Characteristics Unless otherwise specified -40 °C to +150 °C, typical values Pos. Parameter General 4.1.1 Operating voltage 4.1.2 Operating current one channel active all channels active 4.1.3 ...

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Unless otherwise specified -40 °C to +150 °C, typical values Pos. Parameter Thermal Resistance 4.1.10 Junction to case 4.1.11 Junction to ambient one channel active all channels active Input ...

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Protection Functions The device provides embedded protective functions. Integrated protection functions are designed to prevent IC destruction under fault conditions described in the data sheet. Fault conditions are considered as “outside” normal operating range. Protection functions are neither designed ...

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Reverse Polarity Protection In case of reverse polarity, the intrinsic body diode causes power dissipation. Additional power is dissipated by the integrated ground resistor. Use following formula for estimation of total power dissipation ¦ diss(rev) ...

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Electrical Characteristics Unless otherwise specified -40 °C to +150 °C , typical values Pos. Parameter Over Load Protection 4.2.1 Load current limitation 4.2.2 Repetitive short circuit current limitation ...

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Diagnosis For diagnosis purpose, the BTS 5235L provides an Enhanced IntelliSense signal at pins IS1 and IS2. This means in detail, the current sense signal k the load current (ratio = ILIS occurs. In case of a failure mode, ...

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Table 1 Truth Table Operation Mode Normal Operation (ON) Current Limitation Short Circuit to GND Over Temperature Short Circuit Open Load Low Level High Level high impedance, potential depends ...

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Details about timings between the diagnosis signal load current I in ON-state can be found OFF OUT sIS(ON Figure 15 Timing of Diagnosis Signal in ON-state In case ...

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IN OFF sIS(OVL) Figure 16 Timing of Diagnosis Signal in Over Load Condition 4.3.2 OFF-State Diagnosis Details about timings between the diagnosis signal I load current in OFF-state can be ...

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Sense Enable Function The diagnosis signals have to be switched high signal at sense enable pin (SEN). See Figure 18 for details on the timing between SEN pin and diagnosis signal note that the diagnosis is ...

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Electrical Characteristics Unless otherwise specified -40 °C to +150 ° typical values 13 Pos. Parameter General Definition 4.3.1 Diagnostics signal in failure mode 4.3.2 ...

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Unless otherwise specified -40 °C to +150 ° typical values Pos. Parameter 4.3.9 Current sense leakage, while diagnosis disabled 4.3.10 Current sense settling time ...

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Package Outlines BTS 5235L A 0 +0.13 0 ø0.8 x 0.1 Depth -0.05 (Heatslug) 1) Does not include plastic or metal protrusion of 0.15 max. per side 2) Stand OFF 3) ...

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Revision History Version Date Changes V1.0 05-12-19 initial version • • • Data Sheet Smart High-Side Power Switch Revision History 27 BTS 5235L 2005-12-19 ...

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Data Sheet Smart High-Side Power Switch Revision History 28 BTS 5235L V1.0, 2005-12-19 ...

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Edition 2005-12-19 Published by Infineon Technologies AG, St.-Martin-Strasse 53, 81669 München, Germany © Infineon Technologies AG 12/19/05. All Rights Reserved. Attention please! The information given in this data sheet shall in no event be regarded as a guarantee of conditions ...

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Published by Infineon Technologies AG ...

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