fdc6020c-f077 Fairchild Semiconductor, fdc6020c-f077 Datasheet

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fdc6020c-f077

Manufacturer Part Number
fdc6020c-f077
Description
Fdc6020c Complementary Powertrench? Mosfet
Manufacturer
Fairchild Semiconductor
Datasheet
1.FDC6020C-F077.pdf (9 pages)
FDC6020C
General Description
These N & P-Channel MOSFETs are produced using
Fairchild Semiconductor’s advanced PowerTrench
process that has been especially tailored to minimize
on-state
switching performance.
These devices are well suited for low voltage and
battery powered applications where low in-line power
loss and fast switching are required.
Applications
•
•
•
2003 Fairchild Semiconductor Corporation
Complementary PowerTrench
Absolute Maximum Ratings
V
V
I
P
T
Thermal Characteristics
R
R
Package Marking and Ordering Information
Symbol
D
J
DSS
GSS
D
θJA
θJC
, T
DC/DC converter
Load switch
Motor Driving
Device Marking
STG
resistance
.020
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Power Dissipation for Dual Operation
Power Dissipation for single Operation
Operating and Storage Junction Temperature Range
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
and
FDC6020C
yet
- Continuous
- Pulsed
Device
maintain
Parameter
superior
T
A
= 25°C unless otherwise noted
MOSFET
Reel Size
7’’
(Note 1a)
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1a)
(Note 1a)
Features
•
•
•
•
•
Q1 –4.2 A, –20V. R
Q2
Low gate charge
High performance trench technology for extremely
low R
FLMP SSOT-6 package: Enhanced thermal
performance in industry-standard package size
5.9 A, 20V.
DS(ON)
–4.2
.
Q1
–20
±12
–20
4
4
5
5
6
6
Tape width
Bottom Drain Contact
Bottom Drain Contact
Bottom Drain Contact
Bottom Drain Contact
–55 to +150
8mm
R
R
R
DS(ON)
DS(ON)
DS(ON)
DS(ON)
1.6
1.8
1.2
68
1
Q2 (N)
Q2 (N)
Q1 (P)
Q1 (P)
= 55 mΩ @ V
= 82 mΩ @ V
= 27 mΩ @ V
= 39 mΩ @ V
November 2003
Q2
±12
5.9
20
20
3
3
2
2
1
1
FDC6020C Rev B(W)
GS
GS
GS
GS
3000 units
Quantity
= – 4.5 V
= – 2.5 V
= 4.5 V
= 2.5 V
Units
°C/W
°C
W
V
V
A

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fdc6020c-f077 Summary of contents

Page 1

... November 2003 = 55 mΩ – 4.5 V DS(ON mΩ – 2.5 V DS(ON mΩ 4.5 V DS(ON mΩ 2.5 V DS(ON ( (P) Q1 (P) Q2 Units 20 V ± 1.6 W 1.8 1.2 –55 to +150 °C 68 °C/W 1 Quantity 8mm 3000 units FDC6020C Rev B(W) ...

Page 2

... 753 pF Q2 677 Q1 163 pF Q2 171 Ω 2 1 1 1.8 FDC6020C RevB (W) ...

Page 3

... CA 68°C/W when 2 mounted on a 1in pad copper (Single Operation). Type Min Typ Max Units Q1 –1 1.3 Q1 –0.8 –1 0.7 1 102°C/W when mounted on a minimum pad copper (Single Operation). FDC6020C RevB (W) ...

Page 4

... Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. = -2.0V -2.5V -3.0V -3.5V -4. DRAIN CURRENT ( -2. 125 2.5 3 3 GATE TO SOURCE VOLTAGE (V) GS Gate-to-Source Voltage 125 -55 C 0.2 0.4 0.6 0 BODY DIODE FORWARD VOLTAGE (V) SD FDC6020C RevB ( 1.4 ...

Page 5

... Figure 8. Capacitance Characteristics 10µ 100 0.01 Figure 10. Single Pulse Maximum MHz ISS DRAIN TO SOURCE VOLTAGE (V) DS SINGLE PULSE R = 102°C/W θ 25° 100 t , TIME (sec) 1 Power Dissipation. FDC6020C RevB (W) 1000 ...

Page 6

... Figure 16. Body Diode Forward Voltage Variation with Source Current and Temperature. 2.5V 3.0V 3.5V 4. DRAIN CURRENT ( 2. 125 2.5 3 3 GATE TO SOURCE VOLTAGE (V) GS Gate-to-Source Voltage 125 -55 C 0.2 0.4 0.6 0 BODY DIODE FORWARD VOLTAGE (V) SD FDC6020C RevB ( 1.2 ...

Page 7

... V , DRAIN TO SOURCE VOLTAGE (V) DS SINGLE PULSE R = 102°C/W θ 25° 100 t , TIME (sec) 1 Power Dissipation. R ( θJA θ 102 °C/W θJA P(pk ( θJA Duty Cycle 100 1000 FDC6020C RevB (W) 20 1000 ...

Page 8

... Dimensional Outline and Pad Layout Bottom View Top View Recommended Landing Pattern For Standard Dual Configuration FDC6020C RevB (W) ...

Page 9

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FACT Quiet Series™ ActiveArray™ FAST Bottomless™ FASTr™ CoolFET™ FRFET™ CROSSVOLT™ ...

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