fdc6000nz-f077

Manufacturer Part Numberfdc6000nz-f077
DescriptionFdc6000nz Dual N-channel 2.5v Specified Powertrench? Mosfet
ManufacturerFairchild Semiconductor
fdc6000nz-f077 datasheet
 


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FDC6000NZ
Dual N-Channel 2.5V Specified PowerTrench
General Description
This N-Channel 2.5V specified MOSFET is a rugged
gate version of Fairchild's Semiconductor’s advanced
PowerTrench process. It has been optimized for power
management applications with a wide range of gate
drive voltage (2.5V – 12V). Packaged in FLMP SSOT-6,
the R
and thermal properties of the device are
DS(ON)
optimized for battery power management applications.
Applications
• Battery management/Charger Application
• Load switch
S2
S2
S1
S1
G1
G1
S2
S2
S1
S1
TM
TM
SuperSOT-6
SuperSOT-6
FLMP
FLMP
MOSFET Maximum Ratings
Symbol
Parameter
V
Drain-Source Voltage
DSS
V
Gate-Source Voltage
GSS
I
Drain Current
– Continuous
D
– Pulsed
P
Power Dissipation for Dual Operation
D
Power Dissipation for Single Operation
T
, T
Operating and Storage Junction Temperature Range
J
STG
Thermal Characteristics
Thermal Resistance, Junction-to-Ambient
R
θJA
Thermal Resistance, Junction-to-Case
R
θJc
Package Marking and Ordering Information
Device Marking
Device
.0NZ
FDC6000NZ
2004 Fairchild Semiconductor Corporation
MOSFET
Features
• 6.5 A, 20 V
• ESD protection diode (note 3)
• High performance trench technology for extremely
low R
DS(ON)
• FLMP SSOT-6 package: Enhanced thermal
performance in industry-standard package size
G2
G2
o
T
=25
C unless otherwise noted
A
(Note 1a)
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1a)
(Note 1a)
Reel Size
7’’
June 2004
R
= 20 mΩ @ V
= 4.5 V
DS(ON)
GS
R
= 28 mΩ @ V
= 2.5 V
DS(ON)
GS
Bottom Drain Contact
4
3
2
5
1
6
Bottom Drain Contact
Ratings
Units
20
V
±12
V
7.3
A
20
1.6
W
1.8
1.2
–55 to +150
°C
°C/W
68
1
Tape width
Quantity
8mm
3000 units
FDC6000NZ Rev E1 (W)

fdc6000nz-f077 Summary of contents

  • Page 1

    ... Reel Size 7’’ June 2004 mΩ 4.5 V DS(ON mΩ 2.5 V DS(ON) GS Bottom Drain Contact Bottom Drain Contact Ratings Units 20 V ± 1.6 W 1.8 1.2 –55 to +150 °C °C Tape width Quantity 8mm 3000 units FDC6000NZ Rev E1 (W) ...

  • Page 2

    ... 6 4 1.25A (Note Min Typ Max Units mV/°C µA 1 ± 10 µA 0.6 0.9 1.5 V –4 mV/°C mΩ 16.5 20 16.8 21 19.2 24 22 840 pF 210 pF 100 pF Ω 2 1.5 nC 2.1 nC 1.25 A 0.7 1.2 V FDC6000NZ RevE1 (W) ...

  • Page 3

    ... 100 A/µ determined by the user's board design. θCA 68°C/W when 2 mounted on a 1in pad copper (Single Operation). Min Typ Max Units 102°C/W when mounted on a minimum pad copper (Single Operation). FDC6000NZ RevE1 (W) ...

  • Page 4

    ... Dimensional Outline and Pad Layout Bottom View Top View Recommended Landing Pattern For Common Drain Configuration Recommended Landing Pattern For Standard Dual Configuration FDC6000NZ RevE1 (W) ...

  • Page 5

    ... Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. 2.0V 2.5V 3.0V 3.5V 4. DRAIN CURRENT ( 3 125 GATE TO SOURCE VOLTAGE ( 125 -55 C 0.4 0.6 0 BODY DIODE FORWARD VOLTAGE (V) SD FDC6000NZ Rev E1(W) 5 ...

  • Page 6

    ... TIME (sec 1MHz ISS SINGLE PULSE R = 102°C/W θ 25° 100 1000 t , TIME (sec ( θJA θ 102 °C/W θJA P(pk (t) θ Duty Cycle 100 1000 FDC6000NZ Rev E1(W) ...

  • Page 7

    ... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FAST ActiveArray™ FASTr™ Bottomless™ FPS™ CoolFET™ FRFET™ CROSSVOLT™ GlobalOptoisolator™ ...