fdc6000nz-f077 Fairchild Semiconductor, fdc6000nz-f077 Datasheet - Page 2

• Manufacturer Part Number: fdc6000nz-f077
• Description: Fdc6000nz Dual N-channel 2.5v Specified Powertrench? Mosfet
• Manufacturer: Fairchild Semiconductor

Electrical Characteristics
Symbol
Off Characteristics
BV
I
I
On Characteristics
V
R
Drain–Source Diode Characteristics and Maximum Ratings
I
V
∆BV
∆V
g
Dynamic Characteristics
C
C
C
R
Switching Characteristics
t
t
t
t
Q
Q
Q
DSS
GSS
S
d(on)
r
d(off)
f
FS
GS(th)
SD
DS(on)
∆T
∆T
iss
oss
rss
G
g
gs
gd
DSS
GS(th)
DSS
J
J
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate–Body Leakage
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge
Gate–Source Charge
Gate–Drain Charge
Maximum Continuous Drain–Source Diode Forward Current
Drain–Source Diode Forward Voltage
Parameter
(Note 2)
(Note 2)
T
A
= 25°C unless otherwise noted
V
V
V
V
V
V
V
V
V
V
V
I
I
V
V
f = 1.0 MHz
V
V
V
V
D
D
GS
DS
GS
DS
GS
GS
GS
GS
GS
DS
DS
GS
DD
GS
DS
GS
GS
= 250 µA, Referenced to 25°C
= 250 µA, Referenced to 25°C
= 4.5 V, I
= 0 V,
= 16 V,
= ±12 V,
= V
= 4.5 V,
= 4.0 V,
= 3.1 V,
= 2.5 V,
= 5 V,
= 10 V,
= 15 mV,
= 10 V,
= 0 V,
= 10 V,
= 4.5 V,
= 4.5 V
Test Conditions
GS
,
D
I
S
= 6.5A, T
= 1.25A
I
V
V
I
D
D
I
I
I
I
V
I
D
D
D
D
f = 1.0 MHz
I
I
R
D
GS
DS
D
D
= 250 µA
= 250 µA
GS
= 6.5 A
= 6.4 A
= 6.3 A
= 5.5 A
GEN
= 6.5 A,
= 6.5 A
= 1 A,
= 0 V
= 0 V
= 0 V,
= 6 Ω
J
=125°C
(Note 2)
Min
0.6
20
Typ Max Units
16.5
16.8
19.2
22.5
22.8
840
210
100
0.9
2.3
1.5
2.1
0.7
14
–4
30
10
15
18
9
8
± 10
1.25
1.5
1.2
20
21
24
28
30
20
27
18
11
FDC6000NZ RevE1 (W)
32
1
mV/°C
mV/°C
mΩ
nC
nC
nC
µA
µA
pF
pF
pF
ns
ns
ns
ns
Ω
V
V
S
A
V