fdc653n-nf073 Fairchild Semiconductor, fdc653n-nf073 Datasheet

fdc653n-nf073

Manufacturer Part Number

fdc653n-nf073

Description

Fdc653n N-channel Enhancement Mode Field Effect Transistor

Manufacturer

Fairchild Semiconductor

Datasheet

1.FDC653N-NF073.pdf (5 pages)

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Symbol Parameter

THERMAL CHARACTERISTICS

Absolute Maximum Ratings

DSS

GSS

FDC653N

N-Channel Enhancement Mode Field Effect Transistor

This

transistors is produced using Fairchild's proprietary, high cell

density, DMOS technology. This very high density process is

tailored to minimize on-state resistance. These devices are

particularly suited for low voltage applications in notebook

computers, portable phones, PCMICA cards, and other

battery powered circuits where fast switching, and low in-line

power loss are needed in a very small outline surface mount

package.

General Description

STG

SOT-23

N-Channel enhancement mode power field effect

Drain-Source Voltage

Gate-Source Voltage - Continuous

Drain Current - Continuous

Maximum Power Dissipation

Operating and Storage Temperature Range

Thermal Resistance, Junction-to-Ambient

Thermal Resistance, Junction-to-Case

SuperSOT

- Pulsed

SuperSOT

-6

pin 1

-6

= 25°C unless otherwise note

SuperSOT

(Note 1a)

(Note 1b)

(Note 1)

-8

Features

5 A, 30 V. R

Proprietary SuperSOT

lead frame for superior thermal and electrical capabilities.

High density cell design for extremely low R

Exceptional on-resistance and maximum DC current

capability.

SO-8

DS(ON)

FDC653N

-55 to 150

= 0.035

±20

= 0.055

1.6

0.8

SOT-223

-6 package design using copper

@ V

= 10 V

= 4.5 V.

November 1997

DS(ON)

SOIC-16

FDC653N Rev.C

Units

°C/W

°C

Related parts for fdc653n-nf073

fdc653n-nf073 Summary of contents

Page 1

... A (Note 1a) (Note 1a) (Note 1b) (Note 1a) (Note 1) November 1997 = 0.035 @ DS(ON 0.055 @ V = 4.5 V. DS(ON package design using copper . DS(ON) SOIC-16 SOT-223 FDC653N 30 ± 1.6 0.8 -55 to 150 78 30 FDC653N Rev.C Units °C °C/W °C/W ...

Page 2

... C 0.027 0.035 125 C 0.042 0.056 J 0.046 0.055 8 6.2 350 220 80 7 2.1 2.6 1.3 0.75 1.2 (Note 125 C 0 Units µA µ guaranteed by FDC653N Rev.C ...

Page 3

... Drain Current and Gate Voltage 125° 25° GATE TO SOURCE VOLTAGE (V) GS Gate-To- Source Voltage 125°C A 25°C -55°C 0.2 0.4 0.6 0 BODY DIODE FORWARD VOLTAGE (V) SD Variation with Source Current and Temperature. FDC653N Rev 1.2 ...

Page 4

... V , DRAIN TO SOURCE VOLTAGE (V) DS SINGLE PULSE R =See note 25° 100 SINGLE PULSE TIME (SEC) Dissipation. R ( See Note 1b JA P(pk ( Duty Cycle 100 300 FDC653N Rev.B 30 300 ...

Page 5

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FAST Bottomless™ FASTr™ FRFET™ CoolFET™ GlobalOptoisolator™ CROSSVOLT™ GTO™ DenseTrench™ ...

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