fdc640p-nf073 Fairchild Semiconductor, fdc640p-nf073 Datasheet

no-image

fdc640p-nf073

Manufacturer Part Number
fdc640p-nf073
Description
Fdc640p P-channel 2.5v Powertrench? Specified Mosfet
Manufacturer
Fairchild Semiconductor
Datasheet
FDC640P
P-Channel 2.5V PowerTrench Specified MOSFET
General Description
This P-Channel 2.5V specified MOSFET uses a rugged
gate version of Fairchild’s advanced PowerTrench
process. It has been optimized for power management
applications with a wide range of gate drive voltage
(2.5V – 12V).
Applications
2001 Fairchild Semiconductor International
Absolute Maximum Ratings
Symbol
V
V
I
P
T
Thermal Characteristics
R
R
Package Marking and Ordering Information
D
Battery management
Load switch
Battery protection
J
DSS
GSS
D
, T
JA
JC
Device Marking
STG
.640
SuperSOT -6
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Maximum Power Dissipation
Operating and Storage Junction Temperature Range
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
D
D
TM
S
– Continuous
– Pulsed
FDC640P
Device
Parameter
D
D
G
T
A
=25
o
C unless otherwise noted
Reel Size
7’’
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1a)
(Note 1)
Features
–4.5 A, –20 V
Rugged gate rating ( 12V)
Fast switching speed
High performance trench technology for extremely
low R
DS(ON)
1
2
3
Tape width
–55 to +150
8mm
R
R
Ratings
DS(ON)
DS(ON)
–4.5
–20
–20
1.6
0.8
78
30
12
= 0.053
= 0.080
January 2001
6
5
4
@ V
@ V
GS
GS
3000 units
FDC640P Rev E(W)
Quantity
= –4.5 V
= –2.5 V
Units
C/W
C/W
W
V
V
A
C

Related parts for fdc640p-nf073

fdc640p-nf073 Summary of contents

Page 1

... C unless otherwise noted A (Note 1a) (Note 1a) (Note 1b) (Note 1a) (Note 1) Reel Size 7’’ January 2001 R = 0.053 @ V = –4.5 V DS(ON 0.080 @ V = –2.5 V DS(ON Ratings Units – –4.5 A –20 1.6 W 0.8 –55 to +150 C 78 C/W 30 C/W Tape width Quantity 8mm 3000 units FDC640P Rev E(W) ...

Page 2

... Typ Max Units –20 V –14 mV/ C –1 100 nA –100 nA –0.6 –1.0 –1 mV/ C 0.039 0.053 0.062 0.080 0.053 0.077 =125 C J – 890 pF 244 pF 123 –1.3 A –0.7 –1.2 V (Note 2) FDC640P Rev E(W) A ...

Page 3

... Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. = -2.0V -2.5V -3.0V -3.5V -4.0V -4. DRAIN CURRENT ( -2. 125 2.5 3 3 GATE TO SOURCE VOLTAGE (V) GS Gate-to-Source Voltage 125 -55 C 0.2 0.4 0.6 0 BODY DIODE FORWARD VOLTAGE (V) SD FDC640P Rev E( 1.2 ...

Page 4

... OSS C RSS DRAIN TO SOURCE VOLTAGE (V) DS SINGLE PULSE R = 156°C 25° 100 1000 t , TIME (sec) 1 Power Dissipation. R ( 156°C/W JA P(pk ( Duty Cycle 100 FDC640P Rev E(W) 1000 ...

Page 5

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FASTr™ Bottomless™ GlobalOptoisolator™ CoolFET™ GTO™ CROSSVOLT™ HiSeC™ DOME™ ...

Related keywords