rc15s08g ETC-unknow, rc15s08g Datasheet
rc15s08g
Manufacturer Part Number
rc15s08g
Description
Silicon Cell Rectifier
Manufacturer
ETC-unknow
Datasheet
1.RC15S08G.pdf
(1 pages)
• Glass passivated junction chip
• High surge capability
• Solderable electrode surfaces
• Ideal for hybrids
• Polarity: Bottom or upper electrode denotes
(Single-phase, half-wave, resistive or inductive load rating at 25
current by 20%)
Maximum Repetitive Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
(T
Peak Forward Surge Current (8.3ms single
half sine-wave superimposed on rated load)
Maximum Instantaneous Forward Voltage
(at rated forward current)
Maximum DC Reverse Current
(at rated DC blocking voltage)
Typical Junction Capacitance
Typical Thermal Resistance
Storage and Operation Junction Temperature
Note:
VOLTAGE: 100 TO 1000V CURRENT: 15A
FEATURES
MECHANICAL DATA
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
a
=55
RC15S01G THRU RC15S10G
1. Measured at 1 MHz and applied voltage of 4.0V
2. When mounted to heat sink from body.
3. Thermal resistance from junction to ambient.
o
C)
cathode according to the notice in
in package
CELL RECTIFIER
RATINGS
SHANGHAI SUNRISE ELECTRONICS CO., LTD.
SILICON GPP
T
T
a
(Note 2)
(Note 1)
(Note 3)
=150
a
=25
o
o
C
C
SYMBOL
T
R (ja)
V
V
I
STG
I
V
F(AV)
FSM
V
C
RRM
RMS
I
DC
R
F
J
,T
dc
J
RC15S
01G
100
100
70
o
C, unless otherwise stated, for capacitive load, derate
RC15S
02G
Dimensions in inches and (millimeters)
200
140
200
RC15S
04G
400
280
400
-50 to +150
400
300
300
1.0
15
10
1
http://www.sse-diode.com
RC15S
06G
600
420
600
SPECIFICATION
RC15S
08G
800
560
800
TECHNICAL
RC15S
1000
1000
10G
700
UNITS
o
C/W
pF
o
V
V
V
A
A
V
C
A
A
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