sc1205cstrt Semtech Corporation, sc1205cstrt Datasheet

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sc1205cstrt

Manufacturer Part Number
sc1205cstrt
Description
Sc1205 High-speed Synchronous Power Mosfet Driver
Manufacturer
Semtech Corporation
Datasheet
The SC1205 is a cost effective Dual MOSFET Driver de-
signed for switching High and Low side Power MOSFETs.
Each driver is capable of driving a 3000pF load in 20ns
max rise/fall time and has a 20ns max propagation de-
lay from input transition to the gate of the power FET’s.
An internal Overlap Protection circuit prevents shoot-
through from Vin to GND in the main and synchronous
MOSFET’s. The Adaptive Overlap Protection circuit en-
sures the Bottom FET does not turn on until the Top FET
source has reached a voltage low enough to prevent
cross-conduction.
The high current drive capability (3A peak) allows fast
switching, thus reducing switching losses at high (up to
1MHz) frequencies without overheating the driver. The
high voltage CMOS process allows operation from 5-25
Volts at top MOSFET drain, thus making SC1205 suit-
able for battery powered applications. Connecting En-
able pin (EN) to logic low shuts down both drives and
reduces operating current to less than 10uA.
An Under-Voltage-Lock-Out circuit is included to guaran-
tee that both driver outputs are low when the 5V logic
level is less than or equal to 4.4V (typ) at supply ramp up
(4.35V at supply ramp down). An Internal temperature
sensor shuts down all drives in the event of
overtemperature. SC1205 is fabricated utilizing Bi-CMOS
technology for low quiescent current. The SC1205 is of-
fered in a standard SO-8 package.
POWER MANAGEMENT
Revision: September 22, 2004
Typical Application Circuit
Description
Rf
Ri
Vin 5-12V
2200uf
1
2
3
4
5
6
7
8
Rref
VID4
VID3
VID2
VID1
VID0
ERROUT
FB
RREF
SC2422A
BGOUT
2.5m
UVLO
OUT1
OUT2
GND
VCC
OC+
OC-
16
15
14
13
12
11
10
9
10nf
10
+5V
1
Features
Applications
Fast rise and fall times (15ns typical with 3000pf
load)
3 Amp peak drive current
14ns max Propagation delay (BG going low)
Adaptive Non-overlapping Gate Drives provide
shoot-through protection
Floating top drive switches up to 25V
Under-Voltage lock-out
Overtemperature protection
Less than 10
High Density sunchronous power supplies
Motor Drives/Class-D amps/Half bridge drivers
High frequency (to 1.2 MHz) operation allows use
of small inductors and low cost caps in place of
High efficiency portable computers
Battery powered applications
Low cost
electrolytics
VS
EN
CO
SC1205
VS
EN
CO
SC1205
DRN
High Speed Synchronous
BG
TG
DRN
µ
BG
TG
A supply current when EN is low
Power MOSFET Driver
70N03
70N03
70N03
70N03
Vcore, 1.7v,40A
10u,CER
SC1205
www.semtech.com

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sc1205cstrt Summary of contents

Page 1

POWER MANAGEMENT Description The SC1205 is a cost effective Dual MOSFET Driver de- signed for switching High and Low side Power MOSFETs. Each driver is capable of driving a 3000pF load in 20ns max rise/fall time and has a 20ns ...

Page 2

POWER MANAGEMENT Absolute Maximum Ratings Exceeding the specifications below may result in permanent damage to the device, or device malfunction. Operation outside of the parameters specified in the Electrical Characteristics section is not implied ...

Page 3

POWER MANAGEMENT Electrical Characteristics (Cont ...

Page 4

POWER MANAGEMENT AC Operating Specifications (Cont ...

Page 5

POWER MANAGEMENT Pin Configuration Top View (SO-8) Pin Descriptions ...

Page 6

POWER MANAGEMENT Block Diagram Applications Information SC1205 is a high speed, smart dual MOSFET driver designed to drive Low Rds_On power MOSFET’s with ultra-low rise/fall times and propagation delays. As the switching frequencies of PWM controllers is increased ...

Page 7

POWER MANAGEMENT Applications Information (Cont.) the SC1205 PGND pin and the Source of the bottom FET must be very close to each other, preferably with common PCB copper land with multiple vias to the ground plane (if used). The parallel ...

Page 8

POWER MANAGEMENT Applications Information (Cont.) Proper layout will guarantee minimum ringing and elimi- nate the need for external components. Use of SO-8 or other surface mount MOSFETs while increasing thermal resistance, will reduce lead inductance as well as radi- ated ...

Page 9

POWER MANAGEMENT Typical Performance Plots 2004 Semtech Corp. Figure 3: PWM input and Gate drive and phase node switching waveforms with time scale expanded. The MOSFETs driven are FDB7030BL . See Figure 4 (Evaluation Board Schematic) Ch1: PWM input signal ...

Page 10

POWER MANAGEMENT Evaluation Board Schematic - 3SC1205 Figure 4- Microprocessor Core Supply 820uf,16V 820uf,16V 820uf,16V 1u,16V 2004 Semtech Corp. BST GND BST SC1205 GND 8 * www.semtech.com ...

Page 11

POWER MANAGEMENT Evaluation Board Bill of Materials ...

Page 12

... DETAIL AND - DETERMINED AT DATUM PLANE -H- DIM INCHES (.205 .118 .050 .024 X Y .087 Y Z .291 Semtech Corporation Power Management Products Division 200 Flynn Road, Camarillo, CA 93012 Phone: (805)498-2111 FAX (805)498-3804 12 MILLIMETERS MAX MIN NOM MAX - .069 1.35 1.75 - .010 0.10 0.25 - .065 1.25 1.65 - ...

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