flc097wf Eudyna Devices Inc, flc097wf Datasheet

flc097wf

Manufacturer Part Number

flc097wf

Description

Flc097wf C-band Power Gaas Fet

Manufacturer

Eudyna Devices Inc

Datasheet

1.FLC097WF.pdf (4 pages)

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FLC097WF

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FLC097WF

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Edition 1.1

July 1999

CASE STYLE: WF

FEATURES

• High Output Power: P 1dB = 28.8dBm (Typ.)

• High Gain: G 1dB = 8.5dB(Typ.)

• High PAE: η add = 35%(Typ.)

• Proven Reliability

• Hermetic Metal/Ceramic Package

DESCRIPTION

The FLC097WF is a power GaAs FET that is designed for general

purpose applications in the C-Band frequency range as it provides

superior power, gain, and efficiency.

Eudyna stringent Quality Assurance Program assures the highest

reliability and consistent performance.

ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C)

ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C)

Eudyna recommends the following conditions for the reliable operation of GaAs FETs:

Saturated Drain Current

Transconductance

Pinch-off Voltage

Gate Source Breakdown Voltage

Output Power at 1dB G.C.P.

Power Gain at 1dB G.C.P.

Power-added Efficiency

Thermal Resistance

Drain-Source Voltage

Gate-Source Voltage

Total Power Dissipation

Storage Temperature

Channel Temperature

1. The drain-source operating voltage (V DS ) should not exceed +10 volts.

2. The forward and reverse gate currents should not exceed 4.8 and -0.5 mA respectively with

3. The operating channel temperature (T ch ) should not exceed 145°C.

gate resistance of 400Ω.

Item

Symbol

V GSO

G 1dB

I DSS

P 1dB

η add

R th

g m

V p

Symbol

V GS

V DS

T stg

T ch

P T

V DS = 5V, V GS = 0V

V DS = 5V, I DS = 200mA

V DS = 5V, I DS =15mA

I GS = -15µA

V DS = 10V,

I DS = 0.6 I DSS (Typ.),

f = 6 GHz

Channel to Case

Test Conditions

Condition

T c = 25°C

C-Band Power GaAs FET

Min.

27.5

-1.0

7.5

-5

-65 to +175

Rating

Limit

Typ.

4.16

28.8

-2.0

+15

300

150

175

8.5

FLC097WF

-5

G.C.P.: Gain Compression Point

Max.

-3.5

450

°C/W

dBm

Unit

°C

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flc097wf Summary of contents

Page 1

... High PAE: η add = 35%(Typ.) • Proven Reliability • Hermetic Metal/Ceramic Package DESCRIPTION The FLC097WF is a power GaAs FET that is designed for general purpose applications in the C-Band frequency range as it provides superior power, gain, and efficiency. Eudyna stringent Quality Assurance Program assures the highest reliability and consistent performance. ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25° ...

Page 2

... FLC097WF C-Band Power GaAs FET POWER DERATING CURVE 100 150 200 Case Temperature (°C) OUTPUT POWER vs. INPUT POWER V DS =10V 4 GHz I DS ≈ 0.6 I DSS out 6 GHz GHz 20 η add Input Power (dBm) DRAIN CURRENT vs ...

Page 3

... Download S-Parameters, click here 3 FLC097WF C-Band Power GaAs FET S 21 +90° 2GHz .08 .06 3 .04 4 .02 5 2GHz 1 0° -90° ...

Page 4

... FLC097WF C-Band Power GaAs FET Ø1.6±0.01 (0.063) Case Style "WF" Metal-Ceramic Hermetic Package 2.5 (0.098 0.6 (0.024) 8.5±0.2 (0.335) 6.1±0.1 (0.240) 4 0.1±0.05 (0.004) 1. Gate 2. Source (Flange) 3. Drain 4. Source (Flange) Unit: mm(inches) ...

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