hcs373ms Intersil Corporation, hcs373ms Datasheet

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hcs373ms

Manufacturer Part Number
hcs373ms
Description
Radiation Hardened Octal Transparent Latch, Three-state
Manufacturer
Intersil Corporation
Datasheet
September 1995
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999
Features
• 3 Micron Radiation Hardened CMOS SOS
• Total Dose 200K RAD (Si)
• SEP Effective LET No Upsets: >100 MEV-cm
• Single Event Upset (SEU) Immunity < 2 x 10
• Dose Rate Survivability: >1 x 10
• Dose Rate Upset >10
• Latch-Up Free Under Any Conditions
• Military Temperature Range: -55
• Significant Power Reduction Compared to LSTTL ICs
• DC Operating Voltage Range: 4.5V to 5.5V
• Input Logic Levels
• Input Current Levels Ii
Description
The Intersil HCS373MS is a Radiation Hardened octal transpar-
ent three-state latch with an active-low output enable. The
HCS373MS utilizes advanced CMOS/SOS technology. The out-
puts are transparent to the inputs when the Latch Enable (LE) is
HIGH. When the Latch Enable (LE) goes LOW, the data is
latched. The Output Enable (OE) controls the three-state outputs.
When the Output Enable (OE) is HIGH, the outputs are in the
high impedance state. The latch operation is independent of the
state of the Output Enable.
The HCS373MS utilizes advanced CMOS/SOS technology to
achieve high-speed operation. This device is a member of
radiation hardened, high-speed, CMOS/SOS Logic Family.
The HCS373MS is supplied in a 20 lead Ceramic flatpack
(K suffix) or a SBDIP Package (D suffix).
Ordering Information
HCS373DMSR
HCS373KMSR
HCS373D/Sample
HCS373K/Sample
HCS373HMSR
Day (Typ)
- VIL = 0.3 VCC Max
- VIH = 0.7 VCC Min
PART NUMBER
10
RAD (Si)/s 20ns Pulse
5 A at VOL, VOH
TEMPERATURE RANGE
12
o
C to +125
-55
-55
RAD (Si)/s
o
o
C to +125
C to +125
+25
+25
+25
o
o
o
o
C
C
C
C
2
/mg
-9
o
o
C
C
Errors/Bit-
346
Intersil Class S Equivalent
Intersil Class S Equivalent
Sample
Sample
Die
Octal Transparent Latch, Three-State
Pinouts
SCREENING LEVEL
GND
OE
Q0
Q1
Q2
Q3
D0
D1
D2
D3
HCS373MS
FLATPACK PACKAGE (FLATPACK)
20 LEAD CERAMIC DUAL-IN-LINE
20 LEAD CERAMIC METAL SEAL
METAL SEAL PACKAGE (SBDIP)
GND
OE
Q0
D0
D1
Q1
Q2
D2
D3
Q3
MIL-STD-1835 CDFP4-F20
MIL-STD-1835 CDIP2-T20
10
1
2
3
4
5
6
7
8
9
1
2
3
4
5
6
7
8
9
10
TOP VIEW
TOP VIEW
Radiation Hardened
20 Lead SBDIP
20 Lead Ceramic Flatpack
20 Lead SBDIP
20 Lead Ceramic Flatpack
Die
Spec Number
20
19
18
17
16
15
14
13
12
11
File Number
20
19
18
17
16
15
14
13
12
11
PACKAGE
VCC
Q7
D7
D6
Q6
Q5
D5
D4
Q4
LE
518845
2135.2
VCC
Q7
D7
D6
Q6
Q5
D5
D4
Q4
LE

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hcs373ms Summary of contents

Page 1

... Output Enable. The HCS373MS utilizes advanced CMOS/SOS technology to achieve high-speed operation. This device is a member of radiation hardened, high-speed, CMOS/SOS Logic Family. The HCS373MS is supplied lead Ceramic flatpack (K suffi SBDIP Package (D suffix). Ordering Information PART NUMBER ...

Page 2

... COMMON CONTROLS LE (11 High Level Low Level X = Immaterial Low voltage level prior to the high-to-low latch enable transition h = High voltage level prior to the high-to-low latch enable transition HCS373MS LATCH TRUTH TABLE ...

Page 3

... Functional Test VIH = 0.70(VCC), VIL = 0.30(VCC), (Note 2) NOTES: 1. All voltages reference to device GND. 2. For functional tests VO 4.0V is recognized as a logic “1”, and VO Specifications HCS373MS Reliability Information Thermal Resistance SBDIP Package 10mA Ceramic Flatpack Package . . . . . . . . . . . 25mA Maximum Package Power Dissipation at +125 SBDIP Package ...

Page 4

... The parameters listed in Table 3 are controlled via design or process parameters. Min and Max Limits are guaranteed but not directly tested. These parameters are characterized upon initial design release and upon design changes which affect these characteristics. Specifications HCS373MS GROUP (NOTES 1, 2) ...

Page 5

... AC measurements assume RL = 500 , CL = 50pF, Input 3ns, VIL = GND, VIH = VCC. 3. For functional tests VO 4.0V is recognized as a logic “1”, and VO TABLE 5. BURN-IN AND OPERATING LIFE TEST, DELTA PARAMETERS (+25 PARAMETER ICC IOL/IOH IOZL/IOZH Specifications HCS373MS (NOTES 1, 2) CONDITIONS TEMPERATURE 0.5V is recognized as a logic “0”. GROUP B SUBGROUP DELTA LIMIT ...

Page 6

... Each pin except VCC and GND will have a resistor of 680 OPEN 12, 15, 16, 19 NOTE: Each pin except VCC and GND will have a resistor of 47K E, Subgroup 2, sample size is 4 dice/wafer 0 failures. Specifications HCS373MS TABLE 6. APPLICABLE SUBGROUPS METHOD GROUP A SUBGROUPS 100%/5004 ...

Page 7

... However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see web site http://www.intersil.com HCS373MS 100% Interim Electrical Test 1 (T1) 100% Delta Calculation (T0-T1) 100% Static Burn-In 2, Condition hrs ...

Page 8

... DATA VS VS TPLH TPLH Qn VS FIGURE 1. LATCH ENABLE PROPAGATION DELAYS TTLH VOH 80% 20% OUTPUT VOL FIGURE 3. OUTPUT TRANSITION TIMES AC Load Circuit HCS373MS VS INPUT LEVEL DATA TPHL TH(L) TPHL VS LE FIGURE 2. LATCH ENABLE PREREQUISITE TIMES (DATA SET-UP AND HOLD) PARAMETER VCC VIH TTHL ...

Page 9

... Three-State High Timing Diagram VIH OE INPUT VS VIL TPHZ VOH VW OUTPUT VOZ THREE-STATE HIGH VOLTAGE LEVELS PARAMETER HCS VCC 4.50 VIH 4.50 VS 2.25 VT 2.25 VW 3.60 GND 0 VIL 0 HCS373MS Three-State Load Circuit TPLZ CL = 50pF 500 UNITS Three-State Load Circuit TPZH VT UNITS 354 VCC RL ...

Page 10

... D1 (4) Q1 (5) Q2 (6) D2 (7) (8) D3 NOTE: The die diagram is a generic plot from a similar HCS device intended to indicate approximate die size and bond pad location. The mask series for the HCS373 is TA14303A. HCS373MS HCS373MS Q0 OE VCC (2) (1) (20) (19) (9) (10) (11) ...

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