attiny13-20ss ATMEL Corporation, attiny13-20ss Datasheet - Page 118

• Manufacturer Part Number: attiny13-20ss
• Description: 8-bit Microcontroller With 1k Bytes In-system Programmable Flash - Atmel Corporation
• Manufacturer: ATMEL Corporation

Table 55. High-voltage Serial Programming Instruction Set for ATtiny13 (Continued)
Note:
Notes:
118
Instruction
Load “Read
EEPROM”
Command
Read EEPROM
Byte
Write Fuse Low
Bits
Write Fuse High
Bits
Write Lock Bits
Read Fuse Low
Bits
Read Fuse High
Bits
Read Lock Bits
Read Signature
Bytes
Read
Calibration Byte
Load “No
Operation”
Command
a = address high bits, b = address low bits, d = data in high bits, e = data in low bits, p = data out high bits, q = data out low bits,
x = don’t care, 1 = Lock Bit1, 2 = Lock Bit2, 3 = CKSEL0 Fuse, 4 = CKSEL1 Fuse, 5 = SUT0 Fuse, 6 = SUT1 Fuse, 7 = CKDIV8,
Fuse, 8 = WDTON Fuse, 9 = EESAVE Fuse, A = SPIEN Fuse, B = RSTDISBL Fuse, C = BODLEVEL0 Fuse, D= BODLEVEL1
Fuse, E = MONEN Fuse, F = SELFPRGEN Fuse
1. For page sizes less than 256 words, parts of the address (bbbb_bbbb) will be parts of the page address.
2. For page sizes less than 256 bytes, parts of the address (bbbb_bbbb) will be parts of the page address.
3. The EEPROM is written page-wise. But only the bytes that are loaded into the page are actually written to the EEPROM.
ATtiny13
Page-wise EEPROM access is more efficient when multiple bytes are to be written to the same page. Note that auto-erase
of EEPROM is not available in High-voltage Serial Programming, only in SPI Programming.
SDI
SII
SDO
SDI
SII
SDO
SDI
SII
SDO
SDI
SII
SDO
SDI
SII
SDO
SDI
SII
SDO
SDI
SII
SDO
SDI
SII
SDO
SDI
SII
SDO
SDI
SII
SDO
SDI
SII
SDO
0_bbbb_bbbb_00
0_0000_0011_00
0_0100_1100_00
0_0000_1100_00
0_0100_0000_00
0_0100_1100_00
0_0100_0000_00
0_0100_1100_00
0_0010_0000_00
0_0100_1100_00
0_0000_0100_00
0_0100_1100_00
0_0000_0100_00
0_0100_1100_00
0_0000_0100_00
0_0100_1100_00
0_0000_1000_00
0_0100_1100_00
0_0000_1000_00
0_0100_1100_00
0_0000_0000_00
0_0100_1100_00
x_xxxx_xxxx_xx
x_xxxx_xxxx_xx
x_xxxx_xxxx_xx
x_xxxx_xxxx_xx
x_xxxx_xxxx_xx
x_xxxx_xxxx_xx
x_xxxx_xxxx_xx
x_xxxx_xxxx_xx
x_xxxx_xxxx_xx
x_xxxx_xxxx_xx
x_xxxx_xxxx_xx
Instr.1/5
0_000F_EDCB_00
0_A987_6543_00
0_0000_00bb_00
0_aaaa_aaaa_00
0_0001_1100_00
0_0010_1100_00
0_0010_1100_00
0_0000_0021_00
0_0010_1100_00
0_0000_0000_00
0_0110_1000_00
0_0000_0000_00
0_0111_1010_00
0_0000_0000_00
0_0111_1000_00
0_0000_1100_00
0_0000_0000_00
0_0000_1100_00
x_xxxx_xxxx_xx
x_xxxx_xxxx_xx
x_xxxx_xxxx_xx
x_xxxx_xxxx_xx
x_xxxx_xxxx_xx
x_xxxx_xxxx_xx
x_xxxx_xxxx_xx
x_xxxx_xxxx_xx
x_xxxx_xxxx_xx
Instr.2/6
Instruction Format
x_xxFE_DCBx_xx
0_0000_0000_00
0_0110_1000_00
0_0000_0000_00
0_0110_0100_00
0_0000_0000_00
0_0111_0100_00
0_0000_0000_00
0_0110_0100_00
0_0000_0000_00
0_0110_1100_00
A_9876_543x_xx
0_0000_0000_00
0_0111_1110_00
0_0000_0000_00
0_0111_1100_00
0_0000_0000_00
0_0110_1000_00
0_0000_0000_00
0_0111_1000_00
x_xxxx_xxxx_xx
x_xxxx_xxxx_xx
x_xxxx_xxxx_xx
x_xxxx_xxxx_xx
x_xxxx_x21x_xx
x_xxxx_xxxx_xx
x_xxxx_xxxx_xx
Instr.3
q_qqqq_qqq0_00
q_qqqq_qqqx_xx
p_pppp_pppx_xx
0_0000_0000_00
0_0110_1100_00
0_0000_0000_00
0_0110_1100_00
0_0000_0000_00
0_0111_1100_00
0_0000_0000_00
0_0110_1100_00
0_0000_0000_00
0_0110_1100_00
0_0000_0000_00
0_0111_1100_00
x_xxxx_xxxx_xx
x_xxxx_xxxx_xx
x_xxxx_xxxx_xx
Instr.4
Operation Remarks
Enter EEPROM Read mode.
Repeat Instr. 1, 3 - 4 for each new
address. Repeat Instr. 2 for a new
256 byte page.
Wait after Instr. 4 until SDO goes
high. Write A - 3 = “0” to program
the Fuse bit.
Wait after Instr. 4 until SDO goes
high. Write F - B = “0” to program
the Fuse bit.
Wait after Instr. 4 until SDO goes
high. Write 2 - 1 = “0” to program
the Lock Bit.
Reading A - 3 = “0” means the
Fuse bit is programmed.
Reading F - B = “0” means the
Fuse bit is programmed.
Reading 2, 1 = “0” means the Lock
bit is programmed.
Repeats Instr 2 4 for each
signature byte address.
2535G–AVR–01/07