ld1106s ETC-unknow, ld1106s Datasheet

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ld1106s

Manufacturer Part Number
ld1106s
Description
High Performance N-channel Powerjfet With Schottky Diode
Manufacturer
ETC-unknow
Datasheet
PWRLITE LD1106S
High Performance N-Channel
Features
Applications
DPAK Pin Assignments
Pin Definitions
Pin Number
Absolute Maximum Ratings
Drain-Source Voltage
Gate-Source Voltage
Gate-Drain Voltage
Continuous Drain Current
Pulsed Drain Current
Single Pulse Drain-to-Source Avalanche Energy at 25°C
(V
Junction Temperature
Storage Temperature
Lead Soldering Temperature, 10 seconds
Power Dissipation (Derated at 25°C on large heat sink)
DD
Trench Power JFET with low threshold voltage Vth.
Device fully “ON” with Vgs = 0.7V
Optimum for “Low Side” Buck Converters
Optimized for Secondary Rectification in isolated DC-DC
Low Rg and low Cds for high speed switching
No “Body Diode”; extremely low Cds
Added Fast Recovery Schottky Diode in same package
DC-DC Converters for DDR and Graphic designs
Synchronous Rectifiers
PC Motherboard Converters
Step-down power supplies
Brick Modules
VRM Modules
= 5V
1
2
3
DC
, IL=30A
Pin Name
G
G
Source
Drain
Gate
PK
Parameter
, L=0.3mH, R
Pin Function Description
Gate. Transistor Gate
Drain. Transistor Drain
Source. Transistor Source
S
S
G
=100 Ω)
D
D
P
OWERJFET
Description
The Power JFET transistor from Lovoltech is a device that
presents a Low Rdson allowing for improved efficiencies in DC-
DC switching applications. The device is designed with a low
threshold such that drivers can operate at 5V, which reduces the
driver power dissipation and increases the overall efficiency.
Lower threshold produces faster turn-on/turn-off, which
minimizes the required dead time. The transistor “No Body
Diode” provides a very low associated parasitic capacitance Cds.
A Schottky Diode is added for applications where a freewheeling
diode is required. Ringing is also reduced so that a lower voltage
device may be a better solution.
Symbol
T
V
V
V
V
E
P
I
I
T
T
TM
STG
DS
GS
GD
D
D
AS
DS
15V
D
J
N – Channel Power JFET
N – Channel Power JFET
G
G
(V)
with Schottky Diode
with Schottky Diode
with Schottky Diode
Product Summary
-55 to 150°C
-65 to 150°C
Rdson (Ω)
Ratings
260°C
0.009
-10
-18
LD1106S.Rev 0.92 – AD 12-04
120
D
S
S S
S
S S
60
D
15
30
60
I
Units
D
mJ
°C
°C
°C
30
W
V
V
V
A
A
(A)

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ld1106s Summary of contents

Page 1

... =100 Ω STG Product Summary I (A) Rdson (Ω) D 0.009 30 Ratings Units 15 V - 120 mJ °C -55 to 150°C °C -65 to 150°C °C 260° LD1106S.Rev 0.92 – AD 12-04 ...

Page 2

... V Forward Voltage F Qrr Reverse Recovery Charge Notes: 1. Pulse width <= 500µs, duty cycle < Lovoltech, Inc. - 3970 Freedom Circle - Santa Clara, CA 95054 -USA Tel. 1 408 654 1980 Fax 1 408 654 1988 www.lovoltech.com LD1106S Conditions φ 0 φ -50µA G φ ...

Page 3

... LD103SG6, at 25'C 1.E-01 9.E-02 8.E-02 7.E-02 6.E-02 5.E-02 4.E-02 3.E-02 2.E-02 1.E-02 0.E+00 0.0 0.1 0.2 0.3 0.4 VGS(V) Figure 5 – Gate Voltage V G Lovoltech, Inc. - 3970 Freedom Circle - Santa Clara, CA 95054 -USA Tel. 1 408 654 1980 Fax 1 408 654 1988 www.lovoltech.com LD1106S Lot 1 Lot Lot 2 Lot 2 Lot 3 Lot ...

Page 4

... Temperature (C) Temperature (C) Temperature (C) Figure 11 – Total Power Dissipation 4 Lovoltech, Inc. - 3970 Freedom Circle - Santa Clara, CA 95054 -USA Tel. 1 408 654 1980 Fax 1 408 654 1988 www.lovoltech.com LD1106S 25.0 25.0 20.0 20.0 15.0 15.0 10.0 10.0 5.0 5.0 0.0 0.0 100 120 140 0 0 Figure 8 – On-Region Characteristics ...

Page 5

... Lovoltech, Inc. - 3970 Freedom Circle - Santa Clara, CA 95054 -USA Tel. 1 408 654 1980 Fax 1 408 654 1988 www.lovoltech.com LD1106S Package TO252 (DPAK) inch 0.086 0.094 0.035 0.043 0.001 0.009 LD1106S 0.025 0.035 xx.xx.xx 0.204 0.212 0.017 0.023 0.019 0.023 0.212 0.244 0.252 0.260 0.173 0.181 ...

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