ak536256w Accutek Microcircuit Corporation, ak536256w Datasheet
ak536256w
Manufacturer Part Number
ak536256w
Description
262,144 Word By 36 Bit Cmos Accutek Dynamic Random Access Memory
Manufacturer
Accutek Microcircuit Corporation
Datasheet
1.AK536256W.pdf
(2 pages)
The Accutek AK536256W high density memory module is a CMOS
dynamic RAM organized in 256K x 36 bit words. The module con-
sists of eight standard 256K x 4 DRAMs in plastic SOJ packages
and four 256K x 1 DRAMs in PLCC packages. The assembly has 12
drams mounted on the front side of a printed circuit board in a 72 pad
leadless SIM configuration.
The operation of the AK536256W is identical to eight 256K x 4 plus
four 256K x 1 DRAMs. There are four CAS lines and two RAS lines.
Independent byte control is accomplished by four CAS lines. Each
separate CAS line controls two 256K x 4 DRAMs, along with one
256K x 1 DRAM with data in tied to data out to form a 9 bit byte. The
bank of 36 bits is controlled by the two RAS lines. An eighteen bit
data path can be produced by connecting DQ
DQ
· 262,144 x 36 bit organization
· 72 pad Single In-Line Module
· Multiple CAS and RAS lines allow x18 or x36 bit widths
· CAS-before-RAS refresh
· Operating free air temperature 0
· Single 5 Volt Power Supply
DQ
A
CAS
RAS
WE
PD
Vcc
Vss
NC
Leadless SIM: AK536256W
Leaded ZIP: AK536256Z
DESCRIPTION
FEATURES
PIN NOMENCLATURE
MODULE OPTIONS
0
19
- A
0
0
0,
, etc. and alternately strobing RAS
- DQ
8
- CAS
RAS
MICROCIRCUIT CORPORATION
ACCUTEK
35
2
3
Data In/Data Out
Address Inputs
Column Address Strobe
Row Address Strobe
Write Enable
Presence Detect
5v Supply
Ground
No Connect
o
C to 70
0
and RAS
o
C
0
Presence Detect -
PIN ASSIGNMENT
PIN #
to DQ
10
11
12
13
14
15
16
17
18
1
2
3
4
5
6
7
8
9
PD1
PD2
PD3
PD4
2
.
18
, DQ
SYMBOL
DQ18
DQ19
DQ20
DQ21
Vss
DQ0
DQ1
DQ2
DQ3
-60
NC
NC
NC
Vss
Vcc
NC
A0
A1
A2
A3
A4
A5
A6
1
to
Vss
Vss
-70
NC
NC
· Power
· 512 Refresh Cycles, 8 mSEC
· Available in Fast Page Mode and Static Column Mode versions
· Upward compatible with AK536512W, AK5361024W,
PIN #
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
36
2.705 Watt Max Active (70nS)
2.375 Watt Max Active (80 nS)
2.045 Watt Max Active (100 nS)
66 mW Max Standby
AK5362048W, AK5364096W and AK5368192W
Vss
Vss
-80
NC
NC
SYMBOL
DQ22
DQ23
DQ24
DQ25
RAS2
DQ26
DQ4
DQ5
DQ6
DQ7
DQ8
Dynamic Random Access Memory
Vcc
NC
NC
NC
NC
A7
A8
262,144 Word by 36 Bit CMOS
PIN #
37
38
39
40
41
42
43
44
45
46
47
48
49
50
51
52
53
54
SYMBOL
DQ17
DQ35
CAS0
CAS2
CAS3
CAS1
RAS0
DQ27
DQ10
DQ28
DQ11
DQ29
DQ9
Vss
WE
NC
NC
NC
PIN #
55
56
57
58
59
60
61
62
63
64
65
66
67
68
69
70
71
72
AK536256W
SYMBOL
DQ12
DQ30
DQ13
DQ31
DQ32
DQ14
DQ33
DQ15
DQ34
DQ16
PD1
PD2
PD3
PD4
Vcc
Vss
NC
NC
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ak536256w Summary of contents
Page 1
... SIM configuration. The operation of the AK536256W is identical to eight 256K x 4 plus four 256K x 1 DRAMs. There are four CAS lines and two RAS lines. Independent byte control is accomplished by four CAS lines. Each separate CAS line controls two 256K x 4 DRAMs, along with one 256K x 1 DRAM with data in tied to data out to form a 9 bit byte ...
Page 2
FUNCTIONAL DIAGRAM CAS 0 CAS1 RAS RAS RAS CAS CAS A3 RAS CAS A4 DQ1 DQ1 DQ2 DQ2 A6 DQ3 DQ3 ...