2sa1025 Renesas Electronics Corporation., 2sa1025 Datasheet - Page 4

• Manufacturer Part Number: 2sa1025
• Description: Silicon Pnp Epitaxial
• Manufacturer: Renesas Electronics Corporation.

2SA1025, 2SA1081, 2SA1082
Absolute Maximum Ratings (Ta = 25°C)
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Emitter current
Collector power dissipation
Junction temperature
Storage temperature
Electrical Characteristics (Ta = 25°C)
Item
Collector to base
breakdown voltage
Collector to emitter
breakdown voltage
Emitter to base
breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current transfer ratio h
Collector to emitter
saturation voltage
Base to emitter voltage V
Gain bandwidth product f
Collector output
capacitance
Note:
D
250 to 500
See characteristic curves of 2SA1083.
1. The 2SA1025, 2SA1081 and 2SA1082 are grouped by h
E
400 to 800
Symbol Min
V
V
V
I
I
V
Cob
CBO
EBO
T
FE
(BR)CBO
(BR)CEO
(BR)EBO
CE(sat)
BE
*
1
2SA1025
–60
–60
–5
—
—
250
—
—
—
—
Symbol
V
V
V
I
I
P
Tj
Tstg
Typ
—
—
—
—
—
—
—
–0.6 —
90
3.5
C
E
CBO
CEO
EBO
C
Max
—
—
—
–0.1
–0.1
800
–0.2
—
—
2SA1081
Min
–90
–90
–5
—
—
250
—
—
—
—
2SA1025
–60
–60
–5
–100
100
400
150
–55 to +150
Typ Max
—
—
—
—
—
—
—
–0.6 —
90
3.5
—
—
—
–0.1
–0.1
800
–0.2
—
—
2SA1081
–90
–90
–5
–100
100
400
150
–55 to +150
2SA1082
Min
–120 —
–120 —
–5
—
—
250
—
—
—
—
FE
as follows.
Typ Max
—
—
—
—
—
–0.6 —
90
3.5
—
—
—
–0.1
–0.1
800
–0.2
—
—
2SA1082
–120
–120
–5
–100
100
400
150
–55 to +150
Unit Test conditions
V
V
V
V
MHz V
pF
A
A
I
I
R
I
V
V
V
I
I
I
V
I
I
V
f = 1 MHz
C
C
E
C
C
B
C
C
CB
EB
CE
CE
CE
CB
BE
= –10 A, I
= –1 mA
= –10 A, I
= –1 mA,
= –2 mA
= –10 mA,
= –2 mA
= –2 mA
= –50 V, I
= –2 V, I
= –12 V,
= –12 V,
= –12 V,
= –10 V, I
=
Unit
V
V
V
mA
mA
mW
C
C
C
C
E
E
E
= 0
= 0
= 0
= 0
= 0,