2sa1032 Renesas Electronics Corporation., 2sa1032 Datasheet - Page 3

• Manufacturer Part Number: 2sa1032
• Description: Silicon Pnp Epitaxial
• Manufacturer: Renesas Electronics Corporation.

Electrical Characteristics (Ta = 25°C)
Item
Collector to base
breakdown voltage
Collector to emitter
breakdown voltage
Emitter to base
breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current trnsfer ratio
Base to emitter voltage V
Collector to emitter
saturation voltage
Gain bandwidth product f
Collector output
capacitance
Noise figure
Note:
2SA1031
2SA1032
1. The 2SA1031 and 2SA1032 are grouped by h
B
100 to 200
100 to 200
Symbol
V
V
V
I
I
h
V
Cob
NF
CBO
EBO
T
FE
(BR)CBO
(BR)CEO
(BR)EBO
BE
CE(sat)
*
1
C
160 to 320
160 to 320
2SA1031
Min
–30
–30
–5
—
—
100
—
—
200
—
—
Typ
—
—
—
—
—
—
—
—
280
3.3
—
D
250 to 500
—
Max
—
—
—
–0.5
–0.5
500
–0.8
–0.2
—
4.0
5
2SA1032
Min
–55
–50
–5
—
—
100
—
—
200
—
—
FE
as follows.
Typ
—
—
—
—
—
—
—
—
280
3.3
—
Max
—
—
—
–0.5
–0.5
320
–0.8
–0.2
—
4.0
5
Unit
V
V
V
V
V
MHz
pF
dB
2SA1031, 2SA1032
A
A
Test conditions
I
I
I
V
V
V
I
V
I
I
I
V
I
V
f = 1 MHz
V
I
R
f = 120 Hz
C
C
E
C
C
C
B
C
C
CB
EB
CE
CE
CE
CB
CE
g
= –10 A, I
= –1 mA
= –10 A, I
= –1 mA, R
= –2 mA
= –2 mA
= –10 mA,
= –2 mA
= –0.1 mA,
= 500
= –18 V, I
= –2 V, I
= –12 V,
= –12 V,
= –12 V,
= –10 V, I
= –6 V,
,
C
C
E
E
E
BE
= 0
= 0
= 0
= 0
= 0,
=
3