2sa1034 Panasonic Corporation of North America, 2sa1034 Datasheet

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2sa1034

Manufacturer Part Number
2sa1034
Description
Silicon Pnp Epitaxial Planer Type
Manufacturer
Panasonic Corporation of North America
Datasheet
Transistors
2SA1034, 2SA1035
Silicon PNP epitaxial planar type
For low-frequency and low-noise amplification
Complementary to 2SC2405, 2SC2406
■ Features
■ Absolute Maximum Ratings T
■ Electrical Characteristics T
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: January 2003
• Low noise voltage NV
• High forward current transfer ratio h
• Mini type package, allowing downsizing of the equipment and automatic
Collector-base voltage
(Emitter open)
Collector-emitter voltage 2SA1034
(Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
Collector-base voltage
(Emitter open)
Collector-emitter voltage
(Base open)
Emitter-base voltage (Collector open)
Base-emitter voltage
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Forward current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Noise voltage
insertion through the tape packing and the magazine packing
2. * 1: Pulse measurement
* 2: Rank classification
Parameter
Rank
Parameter
h
FE
* 1
180 to 360
2SA1034
2SA1035
2SA1035
2SA1034
2SA1035
2SA1034
2SA1035
* 2
R
* 1
a
Symbol
= 25°C ± 3°C
V
V
V
Symbol
FE
T
V
I
P
CBO
I
T
V
V
V
CEO
EBO
a
CP
I
I
stg
V
C
CE(sat)
NV
C
h
CBO
260 to 520
j
CEO
f
CBO
CEO
EBO
= 25°C
FE
BE
T
S
−55 to +150
Rating
I
I
I
V
V
V
V
I
V
V
R
−100
C
C
E
C
−35
−55
−35
−55
−50
200
150
g
CE
CB
CE
CE
CB
CE
−5
= −10 µA, I
= −2 mA, I
= −10 µA, I
= −100 mA, I
= 100 kΩ, Function = FLAT
SJC00010BED
= −1 V, I
= −10 V, I
= −5 V, I
= −10 V, I
= −10 V, I
= −5 V, I
360 to 700
T
Conditions
Unit
mW
B
C
C
mA
mA
E
°C
°C
E
C
V
V
V
B
C
E
= 0
= −100 mA
= −2 mA
= 2 mA, f = 200 MHz
= 0
= 0
B
= 0
= 0
= −1 mA, G
= −10 mA
Marking Symbol:
V
= 80 dB
10˚
(0.95) (0.95)
1
2.90
1.9
• 2SA1034: F
• 2SA1035: H
+0.20
–0.05
±0.1
Min
−35
−55
−35
−55
180
0.40
−5
3
2
+0.10
–0.05
− 0.7
Typ
200
Mini3-G1 Package
− 0.1
− 0.6
Max
−1.0
700
150
−1
0.16
1: Base
2: Emitter
3: Collector
EIAJ: SC-59
+0.10
–0.06
Unit: mm
MHz
Unit
mV
µA
µA
V
V
V
V
V
1

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2sa1034 Summary of contents

Page 1

... SJC00010BED Unit: mm +0.10 0.40 –0.05 +0.10 0.16 –0. (0.95) (0.95) 1.9 ±0.1 +0.20 2.90 –0.05 10˚ 1: Base 2: Emitter 3: Collector EIAJ: SC-59 Mini3-G1 Package Marking Symbol: • 2SA1034: F • 2SA1035: H Min Typ Max −35 −55 −35 −55 −5 − 0.7 −1.0 − 0.1 −1 180 700 − 0.6 200 = 80 dB 150 V Unit µ ...

Page 2

... 240 200 160 120 120 160 ( °C ) Ambient temperature T a  −800 = − 25° −700 −600 −500 −400 −300 −200 −100 0 − 0.2 − 0.4 − 0.6 − 0.8 −1 Base-emitter voltage V BE  ...

Page 3

... V Function = FLAT 120 100 − − 0.5 mA − 0 100 ( kΩ ) Signal source resistance R g SJC00010BED 2SA1034, 2SA1035 NV  160 = − 140 G V Function = FLAT 120 100 = 100 kΩ kΩ 40 4.7 kΩ ...

Page 4

Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or ...

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