2sa1096 Panasonic Corporation of North America, 2sa1096 Datasheet

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2sa1096

Manufacturer Part Number
2sa1096
Description
Silicon Npn Epitaxial Planar Type For Low-frequency Power Amplification
Manufacturer
Panasonic Corporation of North America
Datasheet
Power Transistors
2SA1096, 2SA1096A
Silicon PNP epitaxial planar type
For low-frequency power amplification
Complementary to 2SC2497, 2SC2497A
■ Features
■ Absolute Maximum Ratings T
■ Electrical Characteristics T
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: February 2003
• Output of 5 W can be obtained by a complementary pair with
• TO-126B package which requires no insulation plate for installa-
Collector-base voltage (Emitter open)
Collector-emitter voltage 2SA1096
(Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
Collector-base voltage (Emitter open)
Collector-emitter voltage
(Base open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
(Common base, input open circuited)
2SC2497 and 2SC2497A
tion to the heat sink
2. * 1: Pulse measurement
* 2: Rank classification
Parameter
Rank
Parameter
h
FE
2SA1096A
80 to 160
2SA1096
2SA1096A
* 1,2
Q
a
Symbol
= 25°C ± 3°C
V
V
V
Symbol
T
V
V
I
P
CBO
I
T
V
V
CEO
EBO
a
CP
I
I
I
stg
C
CE(sat)
BE(sat)
C
C
h
CBO
120 to 220
j
CEO
EBO
f
CBO
CEO
= 25°C
FE
T
ob
R
−55 to +150
Rating
I
I
V
V
V
V
I
I
V
V
C
C
C
C
−70
−50
−60
150
CB
CE
EB
CE
CB
CB
1.2
−5
−2
−3
= −1 mA, I
= −2 mA, I
= −1.5 A, I
= −1.5 A, I
SJD00007BED
= −10 V, I
= −5 V, I
= −5 V, I
= −5 V, I
= −20 V, I
= −20 V, I
Conditions
Unit
E
B
B
B
E
C
C
°C
°C
W
V
V
V
A
A
B
E
= 0.5 A, f = 200 MHz
E
= 0
= − 0.15 A
= − 0.15 A
= 0
= 0
= −1 A
= 0
= 0
= 0, f = 1 MHz
φ 3.16
±0.1
0.75
±0.1
1
Min
−70
−50
−60
8.0
4.6
80
+0.5
–0.1
±0.2
2
3
2.3
0.5
Typ
150
±0.2
55
±0.1
TO-126B-A1 Package
0.5
−100
Max
−1.5
−10
220
−1
−1
±0.1
1: Emitter
2: Collector
3: Base
Unit: mm
3.2
1.76
MHz
Unit
µA
µA
µA
pF
V
V
V
V
±0.2
±0.1
1

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2sa1096 Summary of contents

Page 1

... TO-126B package which requires no insulation plate for installa- tion to the heat sink ■ Absolute Maximum Ratings T Parameter Collector-base voltage (Emitter open) Collector-emitter voltage 2SA1096 (Base open) 2SA1096A Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation ...

Page 2

... 1.6 1.2 0.8 0 120 160 ( °C ) Ambient temperature T a  BE(sat − –25°C C −1 100°C 25°C − 0.1 − 0.01 − 0.01 − 0.1 –1 Collector current I (A) C  240 MHz T = 25° ...

Page 3

... Safe operation area −10 Single pulse T = 25° − − 0.1 − 0.01 − 0.001 − 0.1 −1 −10 −100 Collector-emitter voltage V (V) CE 2SA1096, 2SA1096A SJD00007BED 3 ...

Page 4

Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or ...

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