2sa1203 TOSHIBA Semiconductor CORPORATION, 2sa1203 Datasheet - Page 2

• Manufacturer Part Number: 2sa1203
• Description: Toshiba Transistor Silicon Pnp Epitaxial Type
• Manufacturer: TOSHIBA Semiconductor CORPORATION

Electrical Characteristics
Marking
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
Note 3: h
Lot No.
Characteristics
FE
classification O: 100 to 200, Y: 160 to 320
H
(Ta = 25°C)
V
V
Part No. (or abbreviation code)
Characteristics indicator
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
V
Symbol
(BR) CEO
(BR) EBO
CE (sat)
I
I
V
CBO
EBO
h
C
(Note 3)
f
FE
BE
T
ob
V
V
I
I
V
I
V
V
V
C
E
C
CB
EB
CE
CE
CE
CB
= −1 mA, I
= −10 mA, I
= −1.5 A, I
= −30 V, I
= −5 V, I
= −2 V, I
= −2 V, I
= −2 V, I
= −10 V, I
2
Test Condition
C
B
C
C
C
C
B
E
E
= 0
= −0.03 A
= 0
= −500 mA
= −500 mA
= −500 mA
= 0
= 0
= 0, f = 1 MHz
−30
100
Min
−5
―
―
―
―
―
―
Typ.
120
―
―
―
―
―
―
―
―
2006-11-09
2SA1203
−0.1
−0.1
−2.0
−1.0
Max
320
50
―
―
―
MHz
Unit
μA
μA
pF
V
V
V
V