2sa1235 ISAHAYA ELECTRONICS CORPORRATION, 2sa1235 Datasheet
2sa1235
Manufacturer Part Number
2sa1235
Description
For Low Frequency Amplify Application Silicon Pnp Epitaxial Type Mini Type Description
Manufacturer
ISAHAYA ELECTRONICS CORPORRATION
Datasheet
1.2SA1235.pdf
(4 pages)
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DESCRIPTION
silicon PNP epitaxial transistor,
It is designed for low frequency voltage application.
FEATURE
● Small collector to emitter saturation voltage.
●Excellent linearity of DC forward gain.
●Super mini package for easy mounting
APPLICATION
For Hybrid IC,small type machine low frequency voltage
Amplify application.
2SA1235 is a mini package resin sealed
.
MAXIMUM RATINGS
〈SMALL-SIGNAL TRANSISTOR〉
ELECTRICAL CHARACTERISTICS
Symbol
C to E break down voltage
Collector cut off current
Emitter cut off current
DC forward current gain
DC forward current gain
C to E Saturation Vlotage
Gain bandwidth product
Collector output capacitance
Noise figure
Parameter
V
V
V
T
I
P
T
CBO
CEO
EBO
stg
O
c
j
VCE(sat)=-0.3V max（@Ic=-100mA,IB=-10mA）
Collector to Base voltage
Collector to Emitter voltage
Emitter to Base voltage
Collector current
Collector dissipation
Junction temperature
Storage temperature
Parameter
（Ta=25℃）
ISAHAYA ELECTRONICS CORPORATION
（Ta=25℃）
-55～＋150
Ratings
VCE(sat)
V(BR)
＋150
Symbol
-200
-50
-50
200
-6
I
I
hFE
hFE
Cob
CBO
EBO
NF
fT
CEO
I
V
V
V
V
I
V
V
V
C
C
Unit
mW
mA
=-100μA ,R
CB
EB
CE
CE
=-100mA ,I
CE
CB
CE
℃
℃
V
V
V
=-6V, I
=-50V, I
=-6V, I
=-6V, I
=-6V, I
=-6V, I
=-6V, I
OUTLINE DRAWING
C
C
C
E
E
E
※） It shows hFE classification in below table.
=10mA
=0.3mA,f=100Hz,RG=10kΩ
=0mA
=-1mA
=-0.1mA
=0,f=1MHz
E
ｈＦＥ Item
B
=0mA
=-10mA
BE
Test conditions
=∞
Item
FOR LOW FREQUENCY AMPLIFY APPLICATION
SILICON PNP EPITAXIAL TYPE(mini type)
JEDEC：Similar to TO-236
TERMINAL CONNECTER
JEITA：SC-59
150～300
Ｅ
①：BASE
②：EMITTER
③：COLLECTOR
0.5
①
②
※
250～500
2.5
1.5
Ｆ
Min
-50
150
90
-
-
-
-
-
-
400～800
0.5
③
Ｇ
Limits
200
Typ
2SA1235
-
-
-
-
-
-
4
-
Unit：ｍｍ
Max
-0.1
-0.1
800
-0.3
20
-
-
-
-
MHz
Unit
μA
μA
V
dB
pF
V
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2sa1235 Summary of contents
Page 1
... TRANSISTOR〉 DESCRIPTION 2SA1235 is a mini package resin sealed silicon PNP epitaxial transistor designed for low frequency voltage application. . FEATURE ● Small collector to emitter saturation voltage. VCE(sat)=-0.3V max（@Ic=-100mA,IB=-10mA） ●Excellent linearity of DC forward gain. ●Super mini package for easy mounting ...
Page 2
... COLLECTOR DISSIPATION VS.AMBIENT TEMPERTURE 250 200 150 100 -10 -100 2SA1235 SILICON PNP EPITAXIAL TYPE(mini type) COMMON EMITTER TRANSFER Ta=25℃ VCE=-6V -0.0 -0.2 -0.4 -0.6 -0.8 BASE TO EMITTER VOLTAGE VBE(V) GAIN BAND WIDTH PRODUCT VS. EMITTER CURRENT Ta=25℃ VCE=-6V 0 ...
Page 3
... TRANSISTOR〉 ISAHAYA ELECTRONICS CORPORATION FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE(mini type) 2SA1235 ...
Page 4
Marketing division, Marketing planning department 6-41 Tsukuba, Isahaya, Nagasaki, 854-0065 Japan Keep safety first in your circuit designs! · ISAHAYA Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility ...