2sa1252

Manufacturer Part Number2sa1252
DescriptionPnp / Npn Epitaxial Planar Silicon Transistors
ManufacturerSanyo Semiconductor Corporation
2sa1252 datasheet
 
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Ordering number : EN1048D
2SA1252 / 2SC3134
Features
High V EBO .
Wide ASO and high durability against breakdown.
Specifications
( ) : 2SA1252
Absolute Maximum Ratings at Ta=25 C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
Electrical Characteristics at Ta=25 C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Collector-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Marking: 2SA1252:D
2SC3134: H
* : The 2SA1252 / 2SC3134 are classified by 1mA h FE as follws:
Rank
4
h FE
90 to 180
Any and all SANYO Semiconductor products described or contained herein do not have specifications
that can handle applications that require extremely high levels of reliability, such as life-support systems,
aircraft's control systems, or other applications whose failure can be reasonably expected to result in
serious physical and/or material damage. Consult with your SANYO Semiconductor representative
nearest you before usingany SANYO Semiconductor products described or contained herein in such
applications.
SANYO Semiconductor assumes no responsibility for equipment failures that result from using products
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
products described or contained herein.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
2SA1252 / 2SC3134
SANYO Semiconductors
PNP / NPN Epitaxial Planar Silicon Transistors
High V EBO, AF Amp Applications
Symbol
Conditions
V CBO
V CEO
V EBO
I C
I CP
P C
Tj
Tstg
Symbol
Conditions
I CBO
V CB =(--)40V, I E =0A
I EBO
V EB =(--)10V, I C =0A
h FE
V CE =(--)6V, I C =(--)1mA
f T
V CE =(--)6V, I C =(--)1mA
Cob
V CB =(--)6V, f=1MHz
V CE (sat)
I C =(--)50mA, I B =(--)5mA
V (BR)CBO
I C =(--)10 A, I E =0A
V (BR)CEO
I C =(--)1mA, R BE =
V (BR)EBO
I E =(--)10 A, I C =0A
5
6
7
135 to 270
200 to 400
300 to 600
72606 / 31006CA MS IM 8-4698 / 70502TN (KT) / 71598HA (KT) / 3187AT / 3155MW, TS
DATA SHEET
Ratings
Unit
(--)60
V
(--)50
V
(--)15
V
(- -)150
mA
(- -)300
mA
200
mW
150
C
--55 to +150
C
Ratings
Unit
min
typ
max
(--)0.1
A
(--)0.1
A
90*
600*
100
MHz
(3.5)2.2
pF
(--)0.5
V
(- -)60
V
(- -)50
V
(- -)15
V
No.1048-1/4

2sa1252 Summary of contents

  • Page 1

    ... Collector-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Marking: 2SA1252:D 2SC3134 The 2SA1252 / 2SC3134 are classified by 1mA follws: Rank 180 Any and all SANYO Semiconductor products described or contained herein do not have specifications ...

  • Page 2

    ... --300 0.2 0.4 Collector-to-Emitter Voltage Collector-to-Emitter Voltage 2SA1252 / 2SC3134 0.6 0.8 1.0 ITR03076 20 2SA1252 ITR03078 2SC3134 From top 500 A 450 A 400 A 350 A 300 0.2 0.4 0.6 Collector-to-Emitter Voltage ...

  • Page 3

    ... Collector Current Cob -- 1 1.0 10 Collector-to-Base Voltage 2SA1252 / 2SC3134 100 2SA1252 --6V Pulse 1.2 1.6 0 ITR03080 1000 2SA1252 --6V 7 Pulse 100 100 0 ...

  • Page 4

    ... Collector Current 240 2SA1252 / 2SC3134 200 160 120 Ambient Temperature Specifications of any and all SANYO Semiconductor products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment ...