2sa1790g Panasonic Corporation of North America, 2sa1790g Datasheet
2sa1790g
Manufacturer Part Number
2sa1790g
Description
Small Signal Bipolar Transistors
Manufacturer
Panasonic Corporation of North America
Datasheet
1.2SA1790G.pdf
(4 pages)
Transistors
2SA1790G
Silicon PNP epitaxial planar type
For high-frequency amplification
Complementary to 2SC4626G
■ Features
■ Absolute Maximum Ratings T
■ Electrical Characteristics T
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: May 2007
• Optimum for RF amplification of FM/AM radios
• High transition frequency f
• SS-Mini type package, allowing downsizing of the equipment and
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Base-emitter voltage
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Noise figure
Reverse transfer impedance
Reverse transfer capacitance (Common emitter)
automatic insertion through the tape packing
2. * : Rank classification
Rank
Parameter
Parameter
h
FE
This product complies with the RoHS Directive (EU 2002/95/EC).
70 to 140
*
T
B
a
Symbol
= 25°C ± 3°C
V
V
V
Symbol
T
V
P
CBO
I
T
CEO
EBO
a
110 to 220
I
I
I
stg
V
C
CE(sat)
C
h
NF
CBO
Z
C
j
CEO
EBO
f
= 25°C
FE
BE
T
rb
re
C
−55 to +125
Rating
V
V
V
V
V
I
V
V
V
V
C
−30
−20
−30
125
125
CB
CB
CB
CE
CB
CE
EB
CE
CB
−5
= −10 mA, I
SJC00379AED
= −10 V, I
= −10 V, I
= −10 V, I
= −10 V, I
= −20 V, I
= −5 V, I
= −10 V, I
= −10 V, I
= −10 V, I
Conditions
Unit
mW
C
mA
E
E
E
°C
°C
V
V
V
B
C
B
C
E
E
= 0
= 1 mA, f = 200 MHz
= 1 mA, f = 5 MHz
= 1 mA, f = 2 MHz
= −1 mA
= −1 mA
= 0
= 0
= −1 mA
= 1 mA, f = 10.7 MHz
■ Package
• Code
• Marking Symbol: E
• Pin Name
SSMini3-F3
1. Base
2. Emitter
3. Collector
Min
150
70
− 0.7
− 0.1
Typ
300
1.2
2.8
22
− 0.1
−100
Max
−10
220
4.0
2.0
50
MHz
Unit
µA
µA
µA
dB
pF
V
V
Ω
1
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2sa1790g Summary of contents
Page 1
... This product complies with the RoHS Directive (EU 2002/95/EC). Transistors 2SA1790G Silicon PNP epitaxial planar type For high-frequency amplification Complementary to 2SC4626G ■ Features • Optimum for RF amplification of FM/AM radios • High transition frequency f T • SS-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing ■ ...
Page 2
... This product complies with the RoHS Directive (EU 2002/95/EC). 2SA1790G 120 120 ( °C ) Ambient temperature T a 100 = − 75° 25°C 80 −25° − 0.1 −1 −10 −100 Collector current I ...
Page 3
This product complies with the RoHS Directive (EU 2002/95/EC). SSMini3-F3 +0.05 1.60 − 0.03 +0.05 0.26 − 0. (0.50) (0.50) 1.00 ±0.05 (5°) Unit: mm +0.05 0.13 − 0.02 ...
Page 4
Request for your special attention and precautions in using the technical information and (1) If any of the products or technical information described in this book exported or provided to non-residents, the laws and regulations of the ...