Transistors
2SA1791J
Silicon PNP epitaxial planar type
For high-frequency amplification
Complementary to 2SC4656J
■ Features
■ Absolute Maximum Ratings T
■ Electrical Characteristics T
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: September 2004
• High transition frequency f
• Small collector output capacitance C
• SS-Mini type package, allowing downsizing of the equipment and
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Forward current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
(Common base, input open circuited)
automatic insertion through the tape packing.
2. * : Rank classification
Rank
Parameter
Parameter
h
FE
200 to 400
*
Q
T
a
Symbol
= 25°C ± 3°C
V
V
V
Symbol
ob
T
V
P
CBO
I
T
V
V
V
CEO
EBO
a
250 to 500
I
I
stg
C
CE(sat)
C
C
h
CBO
j
CEO
f
CBO
CEO
EBO
= 25°C
FE
T
ob
R
−55 to +125
Rating
I
I
I
V
V
V
I
V
V
C
C
E
C
−50
−50
−50
125
125
CB
CE
CE
CB
CB
−5
= −10 µA, I
= −1 mA, I
= −10 µA, I
= −10 mA, I
SJC00309AED
= −10 V, I
= −10 V, I
= −10 V, I
= −10 V, I
= −10 V, I
Conditions
Unit
mW
B
mA
°C
°C
E
C
V
V
V
B
B
C
E
E
E
= 0
= 0
= 0
= −1 mA
= 0
= 0
= −2 mA
= 2 mA, f = 200 MHz
= 0, f = 1 MHz
Marking Symbol: AL
1 : Base
2 : Emitter
3 : Collector
0.27
±0.02
5˚
(0.50)(0.50)
1.60
1.00
3
1
Min
−50
−50
200
−5
+0.05
–0.03
±0.05
2
− 0.1
Typ
250
1.5
SSMini3-F1 Package
− 0.1
−100
− 0.3
Max
500
0.12
EIAJ : SC-89
+0.03
–0.01
Unit: mm
MHz
Unit
µA
µA
pF
V
V
V
V
1