2sa1748

Manufacturer Part Number2sa1748
DescriptionSilicon Pnp Epitaxial Planer Type
ManufacturerPanasonic Corporation of North America
2sa1748 datasheet
 
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Transistors
2SA1748
Silicon PNP epitaxial planar type
For high-frequency amplification
Complementary to 2SC4562
■ Features
• High transition frequency f
T
• Small collector output capacitance C
• S-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.
■ Absolute Maximum Ratings T
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Collector power dissipation
Junction temperature
Storage temperature
■ Electrical Characteristics T
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
*
Forward current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
(Common base, input open circuited)
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. * : Rank classification
Rank
Q
h
200 to 400
FE
Publication date: March 2003
ob
= 25°C
a
Symbol
Rating
Unit
−50
V
V
CBO
−50
V
V
CEO
−5
V
V
EBO
−50
I
mA
C
P
150
mW
C
°C
T
150
j
−55 to +150
°C
T
stg
= 25°C ± 3°C
a
Symbol
Conditions
= −10 µA, I
= 0
V
I
CBO
C
E
= −1 mA, I
= 0
V
I
CEO
C
B
= −10 µA, I
= 0
V
I
EBO
E
C
= −10 V, I
= 0
I
V
CBO
CB
E
= −10 V, I
= 0
I
V
CEO
CE
B
= −10 V, I
= −2 mA
h
V
FE
CE
C
= −10 mA, I
= −1 mA
V
I
CE(sat)
C
B
= −10 V, I
= 2 mA, f = 200 MHz
f
V
T
CB
E
= −10 V, I
= 0, f = 1 MHz
C
V
ob
CB
E
R
250 to 500
SJC00028BED
Unit: mm
+0.10
+0.1
0.15
0.3
–0.05
–0.0
3
1
2
(0.65) (0.65)
1.3
±0.1
2.0
±0.2
10˚
1: Base
2: Emitter
3: Collector
EIAJ: SC-70
SMini3-G1 Package
Marking Symbol: AL
Min
Typ
Max
−50
−50
−5
− 0.1
−100
200
500
− 0.1
− 0.3
250
1.5
Unit
V
V
V
µA
µA
V
MHz
pF
1

2sa1748 Summary of contents

  • Page 1

    ... Transistors 2SA1748 Silicon PNP epitaxial planar type For high-frequency amplification Complementary to 2SC4562 ■ Features • High transition frequency f T • Small collector output capacitance C • S-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. ■ ...

  • Page 2

    ... 200 160 120 120 160 ( °C ) Ambient temperature T a  CE(sat) C −100 = −10 −1 = 75° 25°C − 0.1 −25°C − 0.01 −1 −10 −100 −1 000 ( mA ) Collector current I C  ...

  • Page 3

    Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or ...