2sa1744

Manufacturer Part Number2sa1744
DescriptionPnp Silicon Epitaxial Transistor For High-speed Switching
ManufacturerRenesas Electronics Corporation.
2sa1744 datasheet
 


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PNP SILICON EPITAXIAL TRANSISTOR
The 2SA1744 is a power transistor developed for high-speed
switching and features a high h
at Low V
FE
ideal for use as a driver in DC/DC converters and actuators.
In addition, a small resin-molded insulation type package
contributes to high-density mounting and reduction of mounting
cost.
FEATURES
• High h
and low V
:
FE
CE(sat)
≥ 100 (V
= −2 V, I
= −3 A)
h
FE
CE
C
≤ 0.3 V (I
= −8 A, I
= −0.4 A)
V
CE(sat)
C
B
• Full-mold package that does not require an insulating board or
bushing
ABSOLUTE MAXIMUM RATINGS (T
Parameter
Symbol
Collector to base voltage
V
CBO
Collector to emitter voltage
V
CEO
Emitter to base voltage
V
EBO
Collector current (DC)
I
C(DC)
Collector current (pulse)
I
C(pulse)
Base current (DC)
I
B(DC)
Total power dissipation
P
(Tc = 25°C)
T
P
(Ta = 25°C)
Total power dissipation
T
Junction temperature
T
j
Storage temperature
T
stg
* PW ≤ 300 µ s, duty cycle ≤ 10%
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D13160EJ1V0DS00 (1st edition)
Date Published April 2002 N CP(K)
Printed in Japan
DATA SHEET
SILICON POWER TRANSISTOR
FOR HIGH-SPEED SWITCHING
PACKAGE DRAWING (UNIT: mm)
. This transistor is
CE(sat)
= 25° ° ° ° C)
A
Ratings
Unit
−100
V
−60
V
−7.0
V
−15
A
−30
*
A
−7.5
A
30
W
2.0
W
°C
150
−55 to +150
°C
2SA1744
Electrode Connection
1. Base
2. Collector
3. Emitter
©
2002

2sa1744 Summary of contents

  • Page 1

    ... PNP SILICON EPITAXIAL TRANSISTOR The 2SA1744 is a power transistor developed for high-speed switching and features a high h at Low V FE ideal for use as a driver in DC/DC converters and actuators. In addition, a small resin-molded insulation type package contributes to high-density mounting and reduction of mounting cost. FEATURES • ...

  • Page 2

    Parameter Symbol I Collector to emitter voltage V C CEO(SUS) I Collector to emitter voltage V CEX(SUS Collector cutoff current I CBO V Collector cutoff current I CER Collector cutoff current I V CEX1 ...

  • Page 3

    A ° ° ° ° & ° 6$ °  ...

  • Page 4

     6$ ...

  • Page 5

    >0(02@ 6$  ...

  • Page 6

    The information in this document is current as of July, 2001. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date ...