2sa1744 Renesas Electronics Corporation., 2sa1744 Datasheet

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2sa1744

Manufacturer Part Number
2sa1744
Description
Pnp Silicon Epitaxial Transistor For High-speed Switching
Manufacturer
Renesas Electronics Corporation.
Datasheet
Document No. D13160EJ1V0DS00 (1st edition)
Date Published April 2002 N CP(K)
Printed in Japan
switching and features a high h
ideal for use as a driver in DC/DC converters and actuators.
contributes to high-density mounting and reduction of mounting
cost.
FEATURES
• High h
• Full-mold package that does not require an insulating board or
ABSOLUTE MAXIMUM RATINGS (T
* PW ≤ 300 µ s, duty cycle ≤ 10%
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current (DC)
Collector current (pulse)
Base current (DC)
Total power dissipation
Total power dissipation
Junction temperature
Storage temperature
h
V
bushing
The 2SA1744 is a power transistor developed for high-speed
In addition, a small resin-molded insulation type package
FE
CE(sat)
≥ 100 (V
FE
≤ 0.3 V (I
Parameter
and low V
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
CE
= −2 V, I
C
= −8 A, I
CE(sat)
C
:
= −3 A)
B
P
P
= −0.4 A)
PNP SILICON EPITAXIAL TRANSISTOR
T
T
FE
(Ta = 25°C)
(Tc = 25°C)
Symbol
I
C(pulse)
V
V
V
I
I
at Low V
C(DC)
B(DC)
T
CBO
CEO
EBO
T
stg
j
FOR HIGH-SPEED SWITCHING
*
A
CE(sat)
= 25° ° ° ° C)
−55 to +150
Ratings
. This transistor is
DATA SHEET
−100
−7.0
−7.5
−60
−15
−30
150
2.0
30
Unit
°C
°C
W
W
V
V
V
A
A
A
SILICON POWER TRANSISTOR
PACKAGE DRAWING (UNIT: mm)
2SA1744
Electrode Connection
1. Base
2. Collector
3. Emitter
©
2002

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2sa1744 Summary of contents

Page 1

... PNP SILICON EPITAXIAL TRANSISTOR The 2SA1744 is a power transistor developed for high-speed switching and features a high h at Low V FE ideal for use as a driver in DC/DC converters and actuators. In addition, a small resin-molded insulation type package contributes to high-density mounting and reduction of mounting cost. FEATURES • ...

Page 2

Parameter Symbol I Collector to emitter voltage V C CEO(SUS) I Collector to emitter voltage V CEX(SUS Collector cutoff current I CBO V Collector cutoff current I CER Collector cutoff current I V CEX1 ...

Page 3

A ° ° ° ° & ° 6$ °  ...

Page 4

 6$ ...

Page 5

>0(02@ 6$  ...

Page 6

The information in this document is current as of July, 2001. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date ...

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