2sa1300 Unisonic Technologies, 2sa1300 Datasheet

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2sa1300

Manufacturer Part Number
2sa1300
Description
Pnp Epitaxial Silicon Transistor
Manufacturer
Unisonic Technologies
Datasheet
1.2SA1300.pdf (3 pages)

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UTC 2SA1300
SILICON PNP EPITAXAL TYPE
DESCRIPTION
*Strobo Flash Applications.
*Medium Power Amplifier Applications.
FEATURES
*High DC Current Gain and Excellent hFE Linearity.
*hFE(1)=140-600, (V
*hFE(2)=60(Min.),120(Typ.),(V
*Low Saturation Voltage
*V
ABSOLUTE MAXIMUM RATINGS
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
Note :Pulse Width= 10ms(Max.),Duty Cycle=30%(Max.)
ELECTRICAL CHARACTERISTICS
Collector-emitter breakdown voltage V
Emitter-collector breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current Gain
Collector-emitter saturation voltage
Base-emitter voltage
Current gain bandwidth product
Output capacitance
CLASSIFICATIONS OF h
UTC
CE (sat)
= -0.5V(Max.), (I
RANK
PARAMETER
UNISONIC TECHNOLOGIES CO. LTD
CE
= -1V,I
C
PARAMETER
= -2A,I
C
CE
= -0.5A)
PNP EPITAXIAL SILICON TRANSISTOR
E
= -1V,I
= -50mA)
FE1
DC
Pulsed (Note)
V
I
I
h
h
V
V
f
Cob
CBO
EBO
T
C
FE1
FE2
(BR)CEO
(BR)EBO
CE
BE
= -4A)
SYMBOL
(sat)
Y
(TA=25°C)
(TA=25°C)
I
I
V
V
V
V
Ic= -2A, I
V
V
V
C
E
CE
BE
CE
CE
CE
CE
CE
=10mA, I
= -1mA, I
TEST CONDITIONS
= -1V, Ic=0.5A
= -1V, Ic= -4A
= -1V, Ic= -2A
= -1V,Ic= -0.5A
= -10V, I
= -6V, I
= -20V, I
B
= -50mA
B
C
=0
C
=0
E
E
=0
=0, f=1MHz
=0
SYMBOL
GR
V
V
V
V
T
Pc
CBO
CES
CEO
EBO
I
Ic
T
lc
stg
B
j
P
1: Emitter 2: Collector 3:Base
1
MIN
140
-10
60
-6
-
-
-
-
-
-
RATIOS
-55~150
750
150
-20
-20
-10
-6
-2
-5
-2
-0.83
TYP
120
-0.2
140
50
-
-
-
-
-
BL
SOT-89
MAX
-100
-100
600
-0.5
-1.5
QW-R208-012,A
-
-
-
-
-
UNIT
mW
°C
°C
V
V
V
A
A
UNIT
MHz
nA
nA
pF
V
V
V
V
1

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2sa1300 Summary of contents

Page 1

... UTC 2SA1300 PNP EPITAXIAL SILICON TRANSISTOR SILICON PNP EPITAXAL TYPE DESCRIPTION *Strobo Flash Applications. *Medium Power Amplifier Applications. FEATURES *High DC Current Gain and Excellent hFE Linearity. *hFE(1)=140-600 -1V,I = -0.5A *hFE(2)=60(Min.),120(Typ.),(V = -1V *Low Saturation Voltage *V = -0.5V(Max.), (I = -2A,I = -50mA) CE (sat ABSOLUTE MAXIMUM RATINGS ...

Page 2

... UTC 2SA1300 PNP EPITAXIAL SILICON TRANSISTOR RANGE 140-280 - continued - CHARACTERITICS CURVE UTC UNISONIC TECHNOLOGIES CO. LTD 200-400 300-600 QW-R208-012,A 2 ...

Page 3

... UTC 2SA1300 PNP EPITAXIAL SILICON TRANSISTOR UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein ...

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