2sa1923 TOSHIBA Semiconductor CORPORATION, 2sa1923 Datasheet - Page 3

• Manufacturer Part Number: 2sa1923
• Description: Toshiba Transistor Silicon Pnp Triple Diffused Type
• Manufacturer: TOSHIBA Semiconductor CORPORATION

−500
−400
−300
−200
−100
1000
−0.5
−0.3
−0.1
−10
500
300
100
−5
−3
−1
50
30
10
0
5
3
−1
−1
0
−80
Common emitter
V CE = −5 V
Common emitter
I C /I B = 10
−2
−100
Tc = 100°C
Collector-emitter voltage V
−55
−4
Collector current I C (mA)
Collector current I C (mA)
−6
Tc = −55°C
−10
−10
V
100
25
−8
BE (sat)
I
h
C
−60
FE
25
– V
−10 −12
– I
CE
C
– I
−40
C
−100
Common emitter
Tc = 25°C
−14 −16 −18
I B = −0.5 mA
CE
−100
−20
(V)
−10
−5
−2
−1
−1000
−500
−20
3
−3000
−1000
−0.05
−0.03
−500
−400
−300
−200
−100
−300
−100
−0.5
−0.3
−0.1
−30
−10
−30
−10
−1
−5
−3
−1
−3
0
−1
−1
0
Common emitter
V CE = −5 V
I C max (pulsed)*
I C max (continuous)
*: Single nonrepetitive pulse
Curves must be derated
linearly with increase in
temperature.
Common emitter
I C /I B = 10
Tc = 25°C
−0.2
−3
Collector-emitter voltage V
Base-emitter voltage V BE (V)
DC operation
Tc = 25°C
Collector current I C (mA)
−10
Safe Operating Area
−0.4
−10
Tc = 100°C
100
V
CE (sat)
I
C
25
10 ms*
– V
−0.6
−30
1 ms*
−100
BE
Tc = −55°C
– I
V CEO max
C
−100
−0.8
100 μs*
25
CE
−55
−300
(V)
−1000
−1
300 μs*
10 μs*
2006-11-09
2SA1923
−1000
−1.2